STD840DN40

Mfr. #: STD840DN40
Fabricante: STMicroelectronics
Descripción: Bipolar Transistors - BJT Dual NPN High Volt 400V Vceo 700V Vcbo
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STD840DN40 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STD840DN40 Overview

Product belongs to the 500V to 1000V Transistors series. Tube is the packaging method for this product Weight of 0.080001 oz Through Hole Mounting-Style 8-DIP (0.300", 7.62mm) Through Hole mounting type Supplier device package: 8-DIP Configuration Dual Transistor type: 2 NPN (Dual) Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 400V DC current gain minimum (hFE) of Ic/Vce at 8 @ 2A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1V @ 400mA, 2A Power-off control: 3 W Maximum operating temperature of + 150 C Rated VCEO up to 400 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 1 V The 700 V voltage rating is 40 V. 9 V to 18 V rating of 5 V Max DC collector current: 8 A This product is capable of handling a 4 A continuous collector current. Minimum hfe for DC collector-base gain is 8.

STD840DN40 Image

STD840DN40

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD840DN40 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Arrays
  • Series 500V to 1000V Transistors
  • Packaging Tube
  • Unit-Weight 0.080001 oz
  • Mounting-Style Through Hole
  • Package-Case 8-DIP (0.300", 7.62mm)
  • Mounting-Type Through Hole
  • Supplier-Device-Package 8-DIP
  • Configuration Dual
  • Power-Max 3W
  • Transistor-Type 2 NPN (Dual)
  • Current-Collector-Ic-Max 4A
  • Voltage-Collector-Emitter-Breakdown-Max 400V
  • DC-Current-Gain-hFE-Min-Ic-Vce 8 @ 2A, 5V
  • Vce-Saturation-Max-Ib-Ic 1V @ 400mA, 2A
  • Current-Collector-Cutoff-Max 250μA
  • Frequency-Transition -
  • Pd-Power-Dissipation 3 W
  • Maximum-Operating-Temperature + 150 C
  • Collector-Emitter-Voltage-VCEO-Max 400 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 1 V
  • Collector-Base-Voltage-VCBO 700 V
  • Emitter-Base-Voltage-VEBO 9 V to 18 V
  • Maximum-DC-Collector-Current 8 A
  • Continuous-Collector-Current 4 A
  • DC-Collector-Base-Gain-hfe-Min 8

STD840DN40

STD840DN40 Specifications

STD840DN40 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed 500V to 1000V Transistors

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.080001 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed 8-DIP (0.300", 7.62mm)

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is 8-DIP.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Dual.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 2 NPN (Dual).

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 4A.

  • A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?

    Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 400V.

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 8 @ 2A, 5V.

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 1V @ 400mA, 2A.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 3 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 400 V

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: What is the Collector-Emitter-Saturation-Voltage of the product?

    Q: The Collector-Emitter-Saturation-Voltage of the product is 1 V.

  • A: What is the Collector-Base-Voltage-VCBO of the product?

    Q: The Collector-Base-Voltage-VCBO of the product is 700 V.

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 9 V to 18 V.

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 8 A

  • A: What is the Continuous-Collector-Current of the product?

    Q: The Continuous-Collector-Current of the product is 4 A.

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 8

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Ext. Precio
1
0,24 US$
0,24 US$
10
0,23 US$
2,31 US$
100
0,22 US$
21,87 US$
500
0,21 US$
103,30 US$
1000
0,19 US$
194,40 US$
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