| Mfr. #: | STD7NM80-1 |
|---|---|
| Fabricante: | STMicroelectronics |
| Descripción: | MOSFET N-CH 800V 6.5A IPAK |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | STD7NM80-1 Ficha de datos |
RoHS compliant with Details Input bias current of Through Hole Package type is IPAK-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 800 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 6.5 A; The Rds On - Drain-Source Resistance of the product is 1.05 Ohms. The Vgs - Gate-Source Voltage attribute for this product is 30 V. 18 nC Gate Charge of Qg; Maximum Operating Temperature: + 150 C Si is the technology used. Tube is the packaging method for this product Enhancement Channel Mode Configuration Single Fall Time of 10 ns - 55 C minimum operating temperature The power dissipation is 90 W. 8 ns Rise Time Product belongs to the N-channel MDmesh series. 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 35 ns; The 20 ns typical turn-on delay time The Unit Weight is 0.139332 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STD7NM80-1 Specifications
A: What is the RoHS of the product?
Q: The RoHS of the product is Details.
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed Through Hole
A: At what frequency does the Package / Case?
Q: The product Package / Case is IPAK-3.
A: At what frequency does the Number of Channels?
Q: The product Number of Channels is 1 Channel.
A: At what frequency does the Transistor Polarity?
Q: The product Transistor Polarity is N-Channel.
A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?
Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 800 V
A: At what frequency does the Id - Continuous Drain Current?
Q: The product Id - Continuous Drain Current is 6.5 A.
A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?
Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 1.05 Ohms
A: At what frequency does the Vgs - Gate-Source Voltage?
Q: The product Vgs - Gate-Source Voltage is 30 V.
A: Is the cutoff frequency of the product Qg - Gate Charge?
Q: Yes, the product's Qg - Gate Charge is indeed 18 nC
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: What is the Channel Mode of the product?
Q: The Channel Mode of the product is Enhancement.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Single
A: What is the Fall Time of the product?
Q: The Fall Time of the product is 10 ns.
A: What is the Minimum Operating Temperature of the product?
Q: The Minimum Operating Temperature of the product is - 55 C.
A: What is the Pd - Power Dissipation of the product?
Q: The Pd - Power Dissipation of the product is 90 W.
A: Is the cutoff frequency of the product Rise Time?
Q: Yes, the product's Rise Time is indeed 8 ns
A: What is the Series of the product?
Q: The Series of the product is N-channel MDmesh.
A: Is the cutoff frequency of the product Transistor Type?
Q: Yes, the product's Transistor Type is indeed 1 N-Channel
A: What is the Typical Turn-Off Delay Time of the product?
Q: The Typical Turn-Off Delay Time of the product is 35 ns.
A: What is the Typical Turn-On Delay Time of the product?
Q: The Typical Turn-On Delay Time of the product is 20 ns.
A: At what frequency does the Unit Weight?
Q: The product Unit Weight is 0.139332 oz.