STD4NK80ZT4

Mfr. #: STD4NK80ZT4
Fabricante: STMicroelectronics
Descripción: MOSFET N-CH 800V 3A DPAK
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STD4NK80ZT4 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STD4NK80ZT4 Overview

Product belongs to the SuperMESH series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3, DPak (2 Leads + Tab), SC-63 Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: D-Pak Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 800V This product has an 575pF @ 25V value of 300pF @ 25V. This product's Standard. 3A (Tc) continuous drain-ID current at 25°C; This product has an 3.5 Ohm @ 1.5A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 80 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 32 ns of 16 ns. This product has a 12 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 3 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 800 V. The 3.5 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 35 ns This product has a 13 ns. Qg-Gate-Charge is 22.5 nC. This product features a 2.9 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STD4NK80ZT4 Image

STD4NK80ZT4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD4NK80ZT4 Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series SuperMESH
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3, DPak (2 Leads + Tab), SC-63
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package D-Pak
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 80W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 800V
  • Input-Capacitance-Ciss-Vds 575pF @ 25V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 3A (Tc)
  • Rds-On-Max-Id-Vgs 3.5 Ohm @ 1.5A, 10V
  • Vgs-th-Max-Id 4.5V @ 50μA
  • Gate-Charge-Qg-Vgs 22.5nC @ 10V
  • Pd-Power-Dissipation 80 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 32 ns
  • Rise-Time 12 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 3 A
  • Vds-Drain-Source-Breakdown-Voltage 800 V
  • Rds-On-Drain-Source-Resistance 3.5 Ohms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 35 ns
  • Typical-Turn-On-Delay-Time 13 ns
  • Qg-Gate-Charge 22.5 nC
  • Forward-Transconductance-Min 2.9 S
  • Channel-Mode Enhancement

STD4NK80ZT4

STD4NK80ZT4 Specifications

STD4NK80ZT4 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is SuperMESH.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Digi-ReelR Alternate Packaging.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.139332 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-252-3, DPak (2 Leads + Tab), SC-63.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed D-Pak

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: At what frequency does the Drain-to-Source-Voltage-Vdss?

    Q: The product Drain-to-Source-Voltage-Vdss is 800V.

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 575pF @ 25V

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?

    Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 3A (Tc)

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is 3.5 Ohm @ 1.5A, 10V.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 80 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 32 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 12 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 30 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 3 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 800 V.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 3.5 Ohms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 35 ns

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 13 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 22.5 nC.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 2.9 S.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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