STD35N3LH5

Mfr. #: STD35N3LH5
Fabricante: STMicroelectronics
Descripción: IGBT Transistors MOSFET N-Ch 30V 14m 35A 16mOhm STripFET V
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STD35N3LH5 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STD35N3LH5 Overview

Product belongs to the N-channel STripFET series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 35 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 3.5 ns of 16 ns. This product has a 4 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 35 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. The 16 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 20 ns This product has a 4 ns. Qg-Gate-Charge is 5.4 nC. This product operates in Enhancement channel mode for optimal performance.

STD35N3LH5 Image

STD35N3LH5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD35N3LH5 Specifications
  • Manufacturer VB
  • Product Category FETs - Single
  • Series N-channel STripFET
  • Packaging Reel
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 35 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 3.5 ns
  • Rise-Time 4 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 35 A
  • Vds-Drain-Source-Breakdown-Voltage 30 V
  • Rds-On-Drain-Source-Resistance 16 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 20 ns
  • Typical-Turn-On-Delay-Time 4 ns
  • Qg-Gate-Charge 5.4 nC
  • Channel-Mode Enhancement

STD35N3LH5

STD35N3LH5 Specifications

STD35N3LH5 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is N-channel STripFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.139332 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-252-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 35 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 175 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 3.5 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 4 ns

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 20 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 35 A.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 30 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 16 mOhms

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 20 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 4 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 5.4 nC

  • A: At what frequency does the Channel-Mode?

    Q: The product Channel-Mode is Enhancement.

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