STD11NM50N

Mfr. #: STD11NM50N
Fabricante: STMicroelectronics
Descripción: MOSFET N-CH 500V 9A DPAK
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STD11NM50N Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STD11NM50N Overview

Product belongs to the N-channel MDmesh series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 70 W Maximum operating temperature of + 150 C This product has a 10 ns of 16 ns. This product has a 10 ns of 16 ns. This product's +/- 25 V. The ID of continuous drain current is 8.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 500 V. This product has a 3 V Vgs-th gate-source threshold voltage for efficient power management. The 470 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 33 ns This product has a 8 ns. Qg-Gate-Charge is 19 nC.

STD11NM50N Image

STD11NM50N

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STD11NM50N Specifications
  • Manufacturer ST
  • Product Category FETs - Single
  • Series N-channel MDmesh
  • Packaging Reel
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 70 W
  • Maximum-Operating-Temperature + 150 C
  • Fall-Time 10 ns
  • Rise-Time 10 ns
  • Vgs-Gate-Source-Voltage +/- 25 V
  • Id-Continuous-Drain-Current 8.5 A
  • Vds-Drain-Source-Breakdown-Voltage 500 V
  • Vgs-th-Gate-Source-Threshold-Voltage 3 V
  • Rds-On-Drain-Source-Resistance 470 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 33 ns
  • Typical-Turn-On-Delay-Time 8 ns
  • Qg-Gate-Charge 19 nC

STD11NM50N

STD11NM50N Specifications

STD11NM50N FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed N-channel MDmesh

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.139332 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-252-3.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 70 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 10 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 10 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 25 V

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 8.5 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 500 V

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 3 V

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 470 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 33 ns.

  • A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

    Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 8 ns

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 19 nC.

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