| Mfr. #: | STB80NF55L-06T4 |
|---|---|
| Fabricante: | STMicroelectronics |
| Descripción: | RF Bipolar Transistors MOSFET N-Ch, 55V-0.005ohms 80A |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | STB80NF55L-06T4 Ficha de datos |
RoHS compliant with Details Input bias current of SMD/SMT Package type is TO-252-3 Single 1 Channel for basic signal processing The transistor polarity is N-Channel. 55 V is the Vds - Drain-Source Breakdown Voltage Continuous Drain Current identified as 80 A; The Rds On - Drain-Source Resistance of the product is 6.5 mOhms. The Vgs - Gate-Source Voltage attribute for this product is 16 V. Maximum Operating Temperature: + 175 C Si is the technology used. Reel is the packaging method for this product Enhancement Channel Mode Configuration Single Fall Time of 80 ns - 55 C minimum operating temperature The power dissipation is 300 W. 180 ns Rise Time Product belongs to the STB80NF55L series. 1 N-Channel Transistor Type Typical Turn-Off Delay Time of 135 ns; The 32 ns typical turn-on delay time The Unit Weight is 0.139332 oz.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STB80NF55L-06T4 Specifications
A: At what frequency does the RoHS?
Q: The product RoHS is Details.
A: What is the Mounting Style of the product?
Q: The Mounting Style of the product is SMD/SMT.
A: Is the cutoff frequency of the product Package / Case?
Q: Yes, the product's Package / Case is indeed TO-252-3
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: At what frequency does the Transistor Polarity?
Q: The product Transistor Polarity is N-Channel.
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 55 V.
A: At what frequency does the Id - Continuous Drain Current?
Q: The product Id - Continuous Drain Current is 80 A.
A: What is the Rds On - Drain-Source Resistance of the product?
Q: The Rds On - Drain-Source Resistance of the product is 6.5 mOhms.
A: What is the Vgs - Gate-Source Voltage of the product?
Q: The Vgs - Gate-Source Voltage of the product is 16 V.
A: At what frequency does the Maximum Operating Temperature?
Q: The product Maximum Operating Temperature is + 175 C.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Packaging of the product?
Q: The Packaging of the product is Reel.
A: What is the Channel Mode of the product?
Q: The Channel Mode of the product is Enhancement.
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: What is the Fall Time of the product?
Q: The Fall Time of the product is 80 ns.
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 55 C.
A: At what frequency does the Pd - Power Dissipation?
Q: The product Pd - Power Dissipation is 300 W.
A: What is the Rise Time of the product?
Q: The Rise Time of the product is 180 ns.
A: What is the Series of the product?
Q: The Series of the product is STB80NF55L.
A: Is the cutoff frequency of the product Transistor Type?
Q: Yes, the product's Transistor Type is indeed 1 N-Channel
A: What is the Typical Turn-Off Delay Time of the product?
Q: The Typical Turn-Off Delay Time of the product is 135 ns.
A: Is the cutoff frequency of the product Typical Turn-On Delay Time?
Q: Yes, the product's Typical Turn-On Delay Time is indeed 32 ns
A: Is the cutoff frequency of the product Unit Weight?
Q: Yes, the product's Unit Weight is indeed 0.139332 oz