STB18N55M5

STB18N55M5 Overview

Product belongs to the MDmesh M5 series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Power-off control: 90 W This product has a 13 ns of 16 ns. This product has a 9.5 ns of 16 ns. This product's 25 V. The ID of continuous drain current is 13 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 550 V. This product has a 4 V Vgs-th gate-source threshold voltage for efficient power management. The 180 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. Qg-Gate-Charge is 31 nC.

STB18N55M5 Image

STB18N55M5 Specifications

• Manufacturer STMicroelectronics
• Product Category Transistors - FETs, MOSFETs - Single
• Series MDmesh M5
• Packaging Reel
• Unit-Weight 0.139332 oz
• Mounting-Style SMD/SMT
• Package-Case TO-252-3
• Technology Si
• Pd-Power-Dissipation 90 W
• Fall-Time 13 ns
• Rise-Time 9.5 ns
• Vgs-Gate-Source-Voltage 25 V
• Id-Continuous-Drain-Current 13 A
• Vds-Drain-Source-Breakdown-Voltage 550 V
• Vgs-th-Gate-Source-Threshold-Voltage 4 V
• Rds-On-Drain-Source-Resistance 180 mOhms
• Transistor-Polarity N-Channel
• Qg-Gate-Charge 31 nC

STB18N55M5 FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed MDmesh M5

• A: At what frequency does the Packaging?

  Q: The product Packaging is Reel.

• A: Is the cutoff frequency of the product Unit-Weight?

  Q: Yes, the product's Unit-Weight is indeed 0.139332 oz

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is SMD/SMT.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is TO-252-3.

• A: Is the cutoff frequency of the product Technology?

  Q: Yes, the product's Technology is indeed Si

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 90 W

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 13 ns

• A: At what frequency does the Rise-Time?

  Q: The product Rise-Time is 9.5 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 25 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 13 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 550 V.

• A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

  Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 4 V

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 180 mOhms

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 31 nC.