STB11NM60T4

Mfr. #: STB11NM60T4
Fabricante: STMicroelectronics
Descripción: MOSFET N-CH 650V 11A D2PAK
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STB11NM60T4 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STB11NM60T4 Overview

Product belongs to the STB11NM60 series. Reel is the packaging method for this product Weight of 0.139332 oz SMD/SMT Mounting-Style TO-252-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 160 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C This product has a 11 ns of 16 ns. This product has a 20 ns of 16 ns. This product's 30 V. The ID of continuous drain current is 11 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 600 V. The 450 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 6 ns This product has a 20 ns. This product features a 5.2 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

STB11NM60T4 Image

STB11NM60T4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STB11NM60T4 Specifications
  • Manufacturer STM
  • Product Category FETs - Single
  • Series STB11NM60
  • Packaging Reel
  • Unit-Weight 0.139332 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-252-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 160 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Fall-Time 11 ns
  • Rise-Time 20 ns
  • Vgs-Gate-Source-Voltage 30 V
  • Id-Continuous-Drain-Current 11 A
  • Vds-Drain-Source-Breakdown-Voltage 600 V
  • Rds-On-Drain-Source-Resistance 450 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 6 ns
  • Typical-Turn-On-Delay-Time 20 ns
  • Forward-Transconductance-Min 5.2 S
  • Channel-Mode Enhancement

STB11NM60T4

STB11NM60T4 Specifications

STB11NM60T4 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed STB11NM60

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Reel

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.139332 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-252-3.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 160 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 65 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 11 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 20 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 30 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 11 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 600 V

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 450 mOhms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 6 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 20 ns.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 5.2 S.

  • A: Is the cutoff frequency of the product Channel-Mode?

    Q: Yes, the product's Channel-Mode is indeed Enhancement

1680 In Stock
Can ship immediately
Please enter the quantity you need to buy.
Cantidad
Precio unitario
Ext. Precio
1
1,16 US$
1,16 US$
10
1,10 US$
11,01 US$
100
1,04 US$
104,30 US$
500
0,99 US$
492,55 US$
1000
0,93 US$
927,10 US$
Top