| Mfr. #: | STAC250V2-500E |
|---|---|
| Fabricante: | STMicroelectronics |
| Descripción: | RF MOSFET Transistors POWER R.F. |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | STAC250V2-500E Ficha de datos |
Type: RF Power MOSFET Bulk is the packaging method for this product SMD/SMT Mounting-Style STAC177B Si is the technology used. The device offers a 23 dB of 26dB. Maximum operating temperature of + 150 C The operating frequency is 27 MHz. This product's 20 V. The ID of continuous drain current is 1 uA. This product has a Vds-Drain-Source-Breakdown-Voltageof 900 V. The transistor polarity is N-Channel.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STAC250V2-500E Specifications
A: At what frequency does the Type?
Q: The product Type is RF Power MOSFET.
A: At what frequency does the Packaging?
Q: The product Packaging is Bulk.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: At what frequency does the Package-Case?
Q: The product Package-Case is STAC177B.
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: What is the Gain of the product?
Q: The Gain of the product is 23 dB.
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C
A: What is the Operating-Frequency of the product?
Q: The Operating-Frequency of the product is 27 MHz.
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 1 uA.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 900 V.
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is N-Channel.