SD56120M

Mfr. #: SD56120M
Fabricante: STMicroelectronics
Descripción: FET RF 65V 860MHZ M252
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: SD56120M Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
SD56120M Overview

Product belongs to the SD56120 series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style M252 Si is the technology used. The device offers a 13 dB at 860 MHz of 26dB. Power-off control: 236 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 14 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 65 V. The transistor polarity is N-Channel. This product features a 3 S of 500 S for high performance.

SD56120M Image

SD56120M

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SD56120M Specifications
  • Manufacturer ST
  • Product Category Module
  • Series SD56120
  • Type RF Power MOSFET
  • Packaging Tube
  • Mounting-Style SMD/SMT
  • Package-Case M252
  • Technology Si
  • Gain 13 dB at 860 MHz
  • Output-Power 120 W
  • Pd-Power-Dissipation 236 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Operating-Frequency 1 GHz
  • Vgs-Gate-Source-Voltage +/- 20 V
  • Id-Continuous-Drain-Current 14 A
  • Vds-Drain-Source-Breakdown-Voltage 65 V
  • Transistor-Polarity N-Channel
  • Forward-Transconductance-Min 3 S

SD56120M

SD56120M Specifications

SD56120M FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed SD56120

  • A: At what frequency does the Type?

    Q: The product Type is RF Power MOSFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed M252

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: What is the Gain of the product?

    Q: The Gain of the product is 13 dB at 860 MHz.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 236 W

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 65 C.

  • A: At what frequency does the Operating-Frequency?

    Q: The product Operating-Frequency is 1 GHz.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 20 V

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 14 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 65 V.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: Is the cutoff frequency of the product Forward-Transconductance-Min?

    Q: Yes, the product's Forward-Transconductance-Min is indeed 3 S

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