| Mfr. #: | PD57006-E |
|---|---|
| Fabricante: | STMicroelectronics |
| Descripción: | RF MOSFET Transistors RF POWER TRANS |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | PD57006-E Ficha de datos |


Product belongs to the PD57006-E series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style PowerSO-10RF (Formed Lead) Si is the technology used. The device offers a 15 dB at 945 MHz of 26dB. Power-off control: 20 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 1 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 65 V. The transistor polarity is N-Channel. This product features a 0.58 S of 500 S for high performance.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PD57006-E Specifications
A: At what frequency does the Series?
Q: The product Series is PD57006-E.
A: What is the Type of the product?
Q: The Type of the product is RF Power MOSFET.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: At what frequency does the Package-Case?
Q: The product Package-Case is PowerSO-10RF (Formed Lead).
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: Is the cutoff frequency of the product Gain?
Q: Yes, the product's Gain is indeed 15 dB at 945 MHz
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 20 W
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C
A: At what frequency does the Operating-Frequency?
Q: The product Operating-Frequency is 1 GHz.
A: What is the Vgs-Gate-Source-Voltage of the product?
Q: The Vgs-Gate-Source-Voltage of the product is +/- 20 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 1 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 65 V
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: Is the cutoff frequency of the product Forward-Transconductance-Min?
Q: Yes, the product's Forward-Transconductance-Min is indeed 0.58 S