| Mfr. #: | PD54003-E |
|---|---|
| Fabricante: | STMicroelectronics |
| Descripción: | RF MOSFET Transistors RF POWER transistor LDMOST family N-Chan |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | PD54003-E Ficha de datos |


Product belongs to the PD54003-E series. Type: RF Power MOSFET Tube is the packaging method for this product SMD/SMT Mounting-Style PowerSO-10RF (Formed Lead) Si is the technology used. The device offers a 12 dB at 500 MHz of 26dB. Power-off control: 52.8 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 1 GHz. This product's +/- 20 V. The ID of continuous drain current is 4 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. The transistor polarity is N-Channel.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PD54003-E Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed PD54003-E
A: What is the Type of the product?
Q: The Type of the product is RF Power MOSFET.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: What is the Package-Case of the product?
Q: The Package-Case of the product is PowerSO-10RF (Formed Lead).
A: Is the cutoff frequency of the product Technology?
Q: Yes, the product's Technology is indeed Si
A: At what frequency does the Gain?
Q: The product Gain is 12 dB at 500 MHz.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 52.8 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C
A: What is the Operating-Frequency of the product?
Q: The Operating-Frequency of the product is 1 GHz.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is +/- 20 V.
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 4 A.
A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?
Q: The product Vds-Drain-Source-Breakdown-Voltage is 25 V.
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.