MAT12AHZ

Mfr. #: MAT12AHZ
Fabricante: Analog Devices Inc.
Descripción: Bipolar Transistors - BJT Dual-Matched NPN Audio
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: MAT12AHZ Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MAT12AHZ Overview

Product belongs to the MAT12 series. Tube is the packaging method for this product Through Hole Mounting-Style TO-78-6 Metal Can Through Hole mounting type Supplier device package: TO-78-6 Configuration Dual Transistor type: 2 NPN (Dual) Matched Pair Maximum current collector Ic is 20mA . Maximum collector-emitter breakdown voltage of 40V DC current gain minimum (hFE) of Ic/Vce at -. Product Attribute: Vce-Saturation-Max-Ib-Ic: 200mV @ 100μA, 1mA Maximum operating temperature of + 85 C Minimum operating temperature: - 40 C Rated VCEO up to 40 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 0.05 V The 40 V voltage rating is 40 V. 40 V rating of 5 V Max DC collector current: 20 mA Gain-Bandwidth-Product: 200 MHz This product is capable of handling a 20 mA continuous collector current. Minimum hfe for DC collector-base gain is 200. 605 of 605.

MAT12AHZ Image

MAT12AHZ

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MAT12AHZ Specifications
  • Manufacturer Analog Devices Inc.
  • Product Category Transistors (BJT) - Arrays
  • Series MAT12
  • Packaging Tube
  • Mounting-Style Through Hole
  • Package-Case TO-78-6 Metal Can
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-78-6
  • Configuration Dual
  • Power-Max -
  • Transistor-Type 2 NPN (Dual) Matched Pair
  • Current-Collector-Ic-Max 20mA
  • Voltage-Collector-Emitter-Breakdown-Max 40V
  • DC-Current-Gain-hFE-Min-Ic-Vce -
  • Vce-Saturation-Max-Ib-Ic 200mV @ 100μA, 1mA
  • Current-Collector-Cutoff-Max 500pA
  • Frequency-Transition 200MHz
  • Maximum-Operating-Temperature + 85 C
  • Minimum-Operating-Temperature - 40 C
  • Collector-Emitter-Voltage-VCEO-Max 40 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 0.05 V
  • Collector-Base-Voltage-VCBO 40 V
  • Emitter-Base-Voltage-VEBO 40 V
  • Maximum-DC-Collector-Current 20 mA
  • Gain-Bandwidth-Product-fT 200 MHz
  • Continuous-Collector-Current 20 mA
  • DC-Collector-Base-Gain-hfe-Min 200
  • DC-Current-Gain-hFE-Max 605

MAT12AHZ

MAT12AHZ Specifications

MAT12AHZ FAQ
  • A: At what frequency does the Series?

    Q: The product Series is MAT12.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-78-6 Metal Can

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Through Hole.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-78-6

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 2 NPN (Dual) Matched Pair

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 20mA.

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 40V.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed -

  • A: At what frequency does the Vce-Saturation-Max-Ib-Ic?

    Q: The product Vce-Saturation-Max-Ib-Ic is 200mV @ 100μA, 1mA.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 85 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 40 C.

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 40 V.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is NPN.

  • A: Is the cutoff frequency of the product Collector-Emitter-Saturation-Voltage?

    Q: Yes, the product's Collector-Emitter-Saturation-Voltage is indeed 0.05 V

  • A: What is the Collector-Base-Voltage-VCBO of the product?

    Q: The Collector-Base-Voltage-VCBO of the product is 40 V.

  • A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?

    Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 40 V

  • A: At what frequency does the Maximum-DC-Collector-Current?

    Q: The product Maximum-DC-Collector-Current is 20 mA.

  • A: Is the cutoff frequency of the product Gain-Bandwidth-Product-fT?

    Q: Yes, the product's Gain-Bandwidth-Product-fT is indeed 200 MHz

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 20 mA

  • A: Is the cutoff frequency of the product DC-Collector-Base-Gain-hfe-Min?

    Q: Yes, the product's DC-Collector-Base-Gain-hfe-Min is indeed 200

  • A: At what frequency does the DC-Current-Gain-hFE-Max?

    Q: The product DC-Current-Gain-hFE-Max is 605.

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1
32,48 US$
32,48 US$
10
30,85 US$
308,51 US$
100
29,23 US$
2 922,75 US$
500
27,60 US$
13 801,90 US$
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25 980,00 US$
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