| Mfr. #: | MAT03EH |
|---|---|
| Fabricante: | Analog Devices Inc. |
| Descripción: | Bipolar Transistors - BJT HIGH-SPEED DUAL PNP TRANS |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | MAT03EH Ficha de datos |
Product belongs to the MAT03 series. Tube is the packaging method for this product TO-78-6 Metal Can Through Hole mounting type Supplier device package: TO-78-6 Configuration Dual Transistor type: 2 PNP (Dual) Maximum current collector Ic is 20mA . Maximum collector-emitter breakdown voltage of 36V DC current gain minimum (hFE) of Ic/Vce at -. Product Attribute: Vce-Saturation-Max-Ib-Ic: 100mV @ 100μA, 1mA Maximum operating temperature of + 125 C Minimum operating temperature: - 55 C Rated VCEO up to 36 V The transistor polarity is PNP. Saturation voltage between collector and emitter is 100 mV The 36 V voltage rating is 40 V. Max DC collector current: 20 mA Gain-Bandwidth-Product: 190 MHz Minimum hfe for DC collector-base gain is 80 at 10 uA 36 V.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MAT03EH Specifications
A: At what frequency does the Series?
Q: The product Series is MAT03.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-78-6 Metal Can
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Through Hole
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is TO-78-6.
A: Is the cutoff frequency of the product Configuration?
Q: Yes, the product's Configuration is indeed Dual
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 2 PNP (Dual).
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 20mA.
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 36V
A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?
Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed -
A: What is the Vce-Saturation-Max-Ib-Ic of the product?
Q: The Vce-Saturation-Max-Ib-Ic of the product is 100mV @ 100μA, 1mA.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 125 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?
Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 36 V
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is PNP.
A: Is the cutoff frequency of the product Collector-Emitter-Saturation-Voltage?
Q: Yes, the product's Collector-Emitter-Saturation-Voltage is indeed 100 mV
A: At what frequency does the Collector-Base-Voltage-VCBO?
Q: The product Collector-Base-Voltage-VCBO is 36 V.
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 20 mA.
A: Is the cutoff frequency of the product Gain-Bandwidth-Product-fT?
Q: Yes, the product's Gain-Bandwidth-Product-fT is indeed 190 MHz
A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?
Q: The product DC-Collector-Base-Gain-hfe-Min is 80 at 10 uA 36 V.