| Mfr. #: | MAT01GH |
|---|---|
| Fabricante: | Analog Devices Inc. |
| Descripción: | Bipolar Transistors - BJT MATCHED MONO DUAL NPN |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | MAT01GH Ficha de datos |
Product belongs to the MAT01 series. Tube is the packaging method for this product TO-78-6 Metal Can Through Hole mounting type Supplier device package: TO-78-6 Configuration Dual Transistor type: 2 NPN (Dual) Matched Pair Maximum current collector Ic is 25mA . Maximum collector-emitter breakdown voltage of 45V DC current gain minimum (hFE) of Ic/Vce at -. Product Attribute: Vce-Saturation-Max-Ib-Ic: 800mV @ 1mA, 10mA Power-off control: 500 mW Maximum operating temperature of + 125 C Minimum operating temperature: - 55 C Rated VCEO up to 45 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 800 mV The 45 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 25 mA Gain-Bandwidth-Product: 450 MHz Minimum hfe for DC collector-base gain is 250 at 10 uA 15 V.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MAT01GH Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed MAT01
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-78-6 Metal Can.
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Through Hole
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed TO-78-6
A: At what frequency does the Configuration?
Q: The product Configuration is Dual.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is 2 NPN (Dual) Matched Pair.
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 25mA.
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 45V
A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?
Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is -.
A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?
Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 800mV @ 1mA, 10mA
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 500 mW
A: Is the cutoff frequency of the product Maximum-Operating-Temperature?
Q: Yes, the product's Maximum-Operating-Temperature is indeed + 125 C
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 55 C.
A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?
Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 45 V
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed NPN
A: What is the Collector-Emitter-Saturation-Voltage of the product?
Q: The Collector-Emitter-Saturation-Voltage of the product is 800 mV.
A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?
Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 45 V
A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?
Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 5 V
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 25 mA.
A: At what frequency does the Gain-Bandwidth-Product-fT?
Q: The product Gain-Bandwidth-Product-fT is 450 MHz.
A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?
Q: The product DC-Collector-Base-Gain-hfe-Min is 250 at 10 uA 15 V.