MAT01AHZ

Mfr. #: MAT01AHZ
Fabricante: Analog Devices Inc.
Descripción: Bipolar Transistors - BJT MATCHED MONO DUAL NPN
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: MAT01AHZ Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
MAT01AHZ Overview

Product belongs to the MAT01 series. Tray is the packaging method for this product Through Hole Mounting-Style TO-78-6 Metal Can Through Hole mounting type Supplier device package: TO-78-6 Configuration Dual Transistor type: 2 NPN (Dual) Matched Pair Maximum current collector Ic is 25mA . Maximum collector-emitter breakdown voltage of 45V DC current gain minimum (hFE) of Ic/Vce at -. Product Attribute: Vce-Saturation-Max-Ib-Ic: 800mV @ 1mA, 10mA Power-off control: 500 mW Maximum operating temperature of + 125 C Minimum operating temperature: - 55 C Rated VCEO up to 45 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 0.12 V The 45 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 25 mA Gain-Bandwidth-Product: 450 MHz This product is capable of handling a 25 mA continuous collector current. Minimum hfe for DC collector-base gain is 500. 840 of 605.

MAT01AHZ Image

MAT01AHZ

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MAT01AHZ Specifications
  • Manufacturer Analog Devices Inc.
  • Product Category Transistors (BJT) - Arrays
  • Series MAT01
  • Packaging Tray
  • Mounting-Style Through Hole
  • Package-Case TO-78-6 Metal Can
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-78-6
  • Configuration Dual
  • Power-Max 500mW
  • Transistor-Type 2 NPN (Dual) Matched Pair
  • Current-Collector-Ic-Max 25mA
  • Voltage-Collector-Emitter-Breakdown-Max 45V
  • DC-Current-Gain-hFE-Min-Ic-Vce -
  • Vce-Saturation-Max-Ib-Ic 800mV @ 1mA, 10mA
  • Current-Collector-Cutoff-Max 300nA
  • Frequency-Transition 450MHz
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 125 C
  • Minimum-Operating-Temperature - 55 C
  • Collector-Emitter-Voltage-VCEO-Max 45 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 0.12 V
  • Collector-Base-Voltage-VCBO 45 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 25 mA
  • Gain-Bandwidth-Product-fT 450 MHz
  • Continuous-Collector-Current 25 mA
  • DC-Collector-Base-Gain-hfe-Min 500
  • DC-Current-Gain-hFE-Max 840

MAT01AHZ

MAT01AHZ Specifications

MAT01AHZ FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is MAT01.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tray.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is TO-78-6 Metal Can.

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is TO-78-6.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 2 NPN (Dual) Matched Pair.

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 25mA.

  • A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?

    Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 45V

  • A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?

    Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is -.

  • A: At what frequency does the Vce-Saturation-Max-Ib-Ic?

    Q: The product Vce-Saturation-Max-Ib-Ic is 800mV @ 1mA, 10mA.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 500 mW.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 125 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 45 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: What is the Collector-Emitter-Saturation-Voltage of the product?

    Q: The Collector-Emitter-Saturation-Voltage of the product is 0.12 V.

  • A: What is the Collector-Base-Voltage-VCBO of the product?

    Q: The Collector-Base-Voltage-VCBO of the product is 45 V.

  • A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?

    Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 5 V

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 25 mA.

  • A: Is the cutoff frequency of the product Gain-Bandwidth-Product-fT?

    Q: Yes, the product's Gain-Bandwidth-Product-fT is indeed 450 MHz

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 25 mA

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 500.

  • A: At what frequency does the DC-Current-Gain-hFE-Max?

    Q: The product DC-Current-Gain-hFE-Max is 840.

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