DN2530N3-G

DN2530N3-G Overview

Product belongs to the - series. Bulk is the packaging method for this product Weight of 0.016000 oz Through Hole Mounting-Style TO-226-3, TO-92-3 (TO-226AA) Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-92 (TO-226) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 300V This product has an 300pF @ 25V value of 300pF @ 25V. This product's Depletion Mode. 175mA (Tj) continuous drain-ID current at 25°C; This product has an 12 Ohm @ 150mA, 0V of 12 Ohm @ 150mA, 0V. Power-off control: 740 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 15 ns of 16 ns. This product has a 15 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 200 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 300 V. The 12 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 15 ns This product has a 10 ns. This product operates in Depletion channel mode for optimal performance.

DN2530N3-G Image

DN2530N3-G Specifications

• Manufacturer Microchip Technology
• Product Category FETs - Single
• Series -
• Packaging Bulk
• Unit-Weight 0.016000 oz
• Mounting-Style Through Hole
• Package-Case TO-226-3, TO-92-3 (TO-226AA)
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Through Hole
• Number-of-Channels 1 Channel
• Supplier-Device-Package TO-92 (TO-226)
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 740mW
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 300V
• Input-Capacitance-Ciss-Vds 300pF @ 25V
• FET-Feature Depletion Mode
• Current-Continuous-Drain-Id-25°C 175mA (Tj)
• Rds-On-Max-Id-Vgs 12 Ohm @ 150mA, 0V
• Vgs-th-Max-Id -
• Gate-Charge-Qg-Vgs -
• Pd-Power-Dissipation 740 mW
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 15 ns
• Rise-Time 15 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 200 mA
• Vds-Drain-Source-Breakdown-Voltage 300 V
• Rds-On-Drain-Source-Resistance 12 Ohms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 15 ns
• Typical-Turn-On-Delay-Time 10 ns
• Channel-Mode Depletion

DN2530N3-G FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed -

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Bulk.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.016000 oz.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is Through Hole.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-226-3, TO-92-3 (TO-226AA)

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

• A: Is the cutoff frequency of the product Mounting-Type?

  Q: Yes, the product's Mounting-Type is indeed Through Hole

• A: Is the cutoff frequency of the product Number-of-Channels?

  Q: Yes, the product's Number-of-Channels is indeed 1 Channel

• A: At what frequency does the Supplier-Device-Package?

  Q: The product Supplier-Device-Package is TO-92 (TO-226).

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: What is the FET-Type of the product?

  Q: The FET-Type of the product is MOSFET N-Channel, Metal Oxide.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is 300V.

• A: At what frequency does the Input-Capacitance-Ciss-Vds?

  Q: The product Input-Capacitance-Ciss-Vds is 300pF @ 25V.

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Depletion Mode

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 175mA (Tj).

• A: At what frequency does the Rds-On-Max-Id-Vgs?

  Q: The product Rds-On-Max-Id-Vgs is 12 Ohm @ 150mA, 0V.

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 740 mW

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 15 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 15 ns.

• A: What is the Vgs-Gate-Source-Voltage of the product?

  Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

• A: What is the Id-Continuous-Drain-Current of the product?

  Q: The Id-Continuous-Drain-Current of the product is 200 mA.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 300 V.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 12 Ohms.

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 15 ns

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 10 ns

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Depletion.