| Mfr. #: | CSD87502Q2 |
|---|---|
| Fabricante: | Texas Instruments |
| Descripción: | MOSFET 2N-CH 30V 5A 6WSON |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | CSD87502Q2 Ficha de datos |
Product belongs to the NexFET series. Tape & Reel (TR) Alternate Packaging is the packaging method for this product Weight of 0.000342 oz SMD/SMT Mounting-Style Trade name: NexFET. 6-WDFN Exposed Pad Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 6-WSON (2x2) This product uses an 2 N-Channel (Dual) FET-Type transistor. Transistor type: 2 N-Channel 30V This product has an 353pF @ 15V value of 300pF @ 25V. This product's Standard. 5A continuous drain-ID current at 25°C; This product has an 32.4 mOhm @ 4A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 2.3 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3 ns of 16 ns. This product has a 11 ns of 16 ns. This product's +/- 20 V. The ID of continuous drain current is 5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 1.6 V Vgs-th gate-source threshold voltage for efficient power management. The 42 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 12 ns This product has a 3 ns. Qg-Gate-Charge is 2.2 nC. This product features a 75 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD87502Q2 Specifications
A: At what frequency does the Series?
Q: The product Series is NexFET.
A: At what frequency does the Packaging?
Q: The product Packaging is Tape & Reel (TR) Alternate Packaging.
A: What is the Unit-Weight of the product?
Q: The Unit-Weight of the product is 0.000342 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is SMD/SMT.
A: What is the Tradename of the product?
Q: The Tradename of the product is NexFET.
A: At what frequency does the Package-Case?
Q: The product Package-Case is 6-WDFN Exposed Pad.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: Is the cutoff frequency of the product Operating-Temperature?
Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Surface Mount.
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 2 Channel
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is 6-WSON (2x2).
A: What is the FET-Type of the product?
Q: The FET-Type of the product is 2 N-Channel (Dual).
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 2 N-Channel.
A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?
Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 30V
A: At what frequency does the Input-Capacitance-Ciss-Vds?
Q: The product Input-Capacitance-Ciss-Vds is 353pF @ 15V.
A: What is the FET-Feature of the product?
Q: The FET-Feature of the product is Standard.
A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?
Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 5A
A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?
Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 32.4 mOhm @ 4A, 10V
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 2.3 W
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 3 ns.
A: Is the cutoff frequency of the product Rise-Time?
Q: Yes, the product's Rise-Time is indeed 11 ns
A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?
Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed +/- 20 V
A: At what frequency does the Id-Continuous-Drain-Current?
Q: The product Id-Continuous-Drain-Current is 5 A.
A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?
Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 30 V
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 1.6 V.
A: At what frequency does the Rds-On-Drain-Source-Resistance?
Q: The product Rds-On-Drain-Source-Resistance is 42 mOhms.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed N-Channel
A: At what frequency does the Typical-Turn-Off-Delay-Time?
Q: The product Typical-Turn-Off-Delay-Time is 12 ns.
A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?
Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 3 ns
A: At what frequency does the Qg-Gate-Charge?
Q: The product Qg-Gate-Charge is 2.2 nC.
A: What is the Forward-Transconductance-Min of the product?
Q: The Forward-Transconductance-Min of the product is 75 S.
A: What is the Channel-Mode of the product?
Q: The Channel-Mode of the product is Enhancement.