CSD86350Q5D

CSD86350Q5D Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerLDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 2 Channel Supplier device package: 8-LSON (5x6) Configuration Dual This product uses an 2 N-Channel (Half Bridge) FET-Type transistor. Transistor type: 2 N-Channel 25V This product has an 1870pF @ 12.5V value of 300pF @ 25V. This product's Logic Level Gate. 40A continuous drain-ID current at 25°C; This product has an 6 mOhm @ 20A, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 13 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 21 ns of 16 ns. This product has a 23 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 40 A 40 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V 25 V. The 5 mOhms 1.1 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. The CSD86350Q5DEVM-604.

CSD86350Q5D Image

CSD86350Q5D Specifications

• Manufacturer Texas Instruments
• Product Category IC Chips
• Series NexFET
• Packaging Digi-ReelR Alternate Packaging
• Mounting-Style SMD/SMT
• Tradename NexFET
• Package-Case 8-PowerLDFN
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 2 Channel
• Supplier-Device-Package 8-LSON (5x6)
• Configuration Dual
• FET-Type 2 N-Channel (Half Bridge)
• Power-Max 13W
• Transistor-Type 2 N-Channel
• Drain-to-Source-Voltage-Vdss 25V
• Input-Capacitance-Ciss-Vds 1870pF @ 12.5V
• FET-Feature Logic Level Gate
• Current-Continuous-Drain-Id-25°C 40A
• Rds-On-Max-Id-Vgs 6 mOhm @ 20A, 8V
• Vgs-th-Max-Id 2.1V @ 250μA
• Gate-Charge-Qg-Vgs 10.7nC @ 4.5V
• Pd-Power-Dissipation 13 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 21 ns
• Rise-Time 23 ns
• Vgs-Gate-Source-Voltage 10 V
• Id-Continuous-Drain-Current 40 A 40 A
• Vds-Drain-Source-Breakdown-Voltage 25 V 25 V
• Rds-On-Drain-Source-Resistance 5 mOhms 1.1 mOhms
• Transistor-Polarity N-Channel
• Development-Kit CSD86350Q5DEVM-604

CSD86350Q5D FAQ

• A: At what frequency does the Series?

  Q: The product Series is NexFET.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: Is the cutoff frequency of the product Tradename?

  Q: Yes, the product's Tradename is indeed NexFET

• A: At what frequency does the Package-Case?

  Q: The product Package-Case is 8-PowerLDFN.

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: Is the cutoff frequency of the product Operating-Temperature?

  Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Surface Mount.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 2 Channel.

• A: Is the cutoff frequency of the product Supplier-Device-Package?

  Q: Yes, the product's Supplier-Device-Package is indeed 8-LSON (5x6)

• A: At what frequency does the Configuration?

  Q: The product Configuration is Dual.

• A: At what frequency does the FET-Type?

  Q: The product FET-Type is 2 N-Channel (Half Bridge).

• A: What is the Transistor-Type of the product?

  Q: The Transistor-Type of the product is 2 N-Channel.

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is 25V.

• A: What is the Input-Capacitance-Ciss-Vds of the product?

  Q: The Input-Capacitance-Ciss-Vds of the product is 1870pF @ 12.5V.

• A: At what frequency does the FET-Feature?

  Q: The product FET-Feature is Logic Level Gate.

• A: What is the Current-Continuous-Drain-Id-25°C of the product?

  Q: The Current-Continuous-Drain-Id-25°C of the product is 40A.

• A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

  Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 6 mOhm @ 20A, 8V

• A: What is the Pd-Power-Dissipation of the product?

  Q: The Pd-Power-Dissipation of the product is 13 W.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 21 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 23 ns.

• A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

  Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 10 V

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 40 A 40 A

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 25 V 25 V

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 5 mOhms 1.1 mOhms.

• A: At what frequency does the Transistor-Polarity?

  Q: The product Transistor-Polarity is N-Channel.

• A: At what frequency does the Development-Kit?

  Q: The product Development-Kit is CSD86350Q5DEVM-604.