CSD25481F4

Mfr. #: CSD25481F4
Fabricante: Texas Instruments
Descripción: MOSFET P-CH 20V 2.5A 3PICOSTAR
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: CSD25481F4 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD25481F4 Overview

Product belongs to the CSD25481F4 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. PicoStar-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Channel Transistor type: 1 P-Channel Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 6.7 ns of 16 ns. This product has a 3.6 ns of 16 ns. This product's - 12 V. The ID of continuous drain current is - 2.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 20 V. This product has a - 950 mV Vgs-th gate-source threshold voltage for efficient power management. The 105 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 16.9 ns This product has a 4.1 ns. Qg-Gate-Charge is 0.913 nC. This product features a 3.3 S of 500 S for high performance.

CSD25481F4 Image

CSD25481F4

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD25481F4 Specifications
  • Manufacturer TI
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD25481F4
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case PicoStar-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single Channel
  • Transistor-Type 1 P-Channel
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 6.7 ns
  • Rise-Time 3.6 ns
  • Vgs-Gate-Source-Voltage - 12 V
  • Id-Continuous-Drain-Current - 2.5 A
  • Vds-Drain-Source-Breakdown-Voltage - 20 V
  • Vgs-th-Gate-Source-Threshold-Voltage - 950 mV
  • Rds-On-Drain-Source-Resistance 105 mOhms
  • Transistor-Polarity P-Channel
  • Typical-Turn-Off-Delay-Time 16.9 ns
  • Typical-Turn-On-Delay-Time 4.1 ns
  • Qg-Gate-Charge 0.913 nC
  • Forward-Transconductance-Min 3.3 S

CSD25481F4

CSD25481F4 Specifications

CSD25481F4 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is CSD25481F4.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is PicoStar-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single Channel

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 P-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 500 mW.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 6.7 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 3.6 ns.

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed - 12 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is - 2.5 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed - 20 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is - 950 mV.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 105 mOhms.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is P-Channel.

  • A: At what frequency does the Typical-Turn-Off-Delay-Time?

    Q: The product Typical-Turn-Off-Delay-Time is 16.9 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 4.1 ns.

  • A: What is the Qg-Gate-Charge of the product?

    Q: The Qg-Gate-Charge of the product is 0.913 nC.

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is 3.3 S.

1680 In Stock
Can ship immediately
Please enter the quantity you need to buy.
Cantidad
Precio unitario
Ext. Precio
1
0,09 US$
0,09 US$
10
0,09 US$
0,86 US$
100
0,08 US$
8,10 US$
500
0,08 US$
38,25 US$
1000
0,07 US$
72,00 US$
Top