CSD25211W1015

Mfr. #: CSD25211W1015
Fabricante: Texas Instruments
Descripción: MOSFET P-CH 20V 3.2A 6DSBGA
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: CSD25211W1015 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD25211W1015 Overview

Product belongs to the CSD25211W1015 series. Reel is the packaging method for this product Weight of 0.000060 oz SMD/SMT Mounting-Style Trade name: NexFET. DSBGA-6 Si is the technology used. Number of channels: 1 Channel Configuration Single Channel Transistor type: 1 P-Channel Power-off control: 1 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 14.2 ns of 16 ns. This product has a 8.8 ns of 16 ns. This product's - 6 V. The ID of continuous drain current is - 3.2 A. This product has a Vds-Drain-Source-Breakdown-Voltageof - 20 V. This product has a - 800 mV Vgs-th gate-source threshold voltage for efficient power management. The 33 mOhms for this product is 12 Ohms. The transistor polarity is P-Channel. 'Typical-Turn-Off-Delay-Time' of 36.9 ns This product has a 13.6 ns. Qg-Gate-Charge is 3.4 nC. This product features a 12 S of 500 S for high performance.

CSD25211W1015 Image

CSD25211W1015

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD25211W1015 Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD25211W1015
  • Packaging Reel
  • Unit-Weight 0.000060 oz
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case DSBGA-6
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single Channel
  • Transistor-Type 1 P-Channel
  • Pd-Power-Dissipation 1 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 14.2 ns
  • Rise-Time 8.8 ns
  • Vgs-Gate-Source-Voltage - 6 V
  • Id-Continuous-Drain-Current - 3.2 A
  • Vds-Drain-Source-Breakdown-Voltage - 20 V
  • Vgs-th-Gate-Source-Threshold-Voltage - 800 mV
  • Rds-On-Drain-Source-Resistance 33 mOhms
  • Transistor-Polarity P-Channel
  • Typical-Turn-Off-Delay-Time 36.9 ns
  • Typical-Turn-On-Delay-Time 13.6 ns
  • Qg-Gate-Charge 3.4 nC
  • Forward-Transconductance-Min 12 S

CSD25211W1015

CSD25211W1015 Specifications

CSD25211W1015 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is CSD25211W1015.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.000060 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is DSBGA-6.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single Channel.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 P-Channel.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 1 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 14.2 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 8.8 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is - 6 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is - 3.2 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is - 20 V.

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is - 800 mV.

  • A: What is the Rds-On-Drain-Source-Resistance of the product?

    Q: The Rds-On-Drain-Source-Resistance of the product is 33 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed P-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 36.9 ns

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 13.6 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 3.4 nC

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 12 S.

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1
0,21 US$
0,21 US$
10
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2,00 US$
100
0,19 US$
18,90 US$
500
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89,25 US$
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