CSD19506KCS

Mfr. #: CSD19506KCS
Fabricante: Texas Instruments
Descripción: Darlington Transistors MOSFET 80V N-CH Power MOSFET
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: CSD19506KCS Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD19506KCS Overview

Product belongs to the CSD19506KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 375 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 10 ns of 16 ns. This product has a 11 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 273 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. This product has a 2.5 V Vgs-th gate-source threshold voltage for efficient power management. The 2.2 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 30 ns This product has a 19 ns. Qg-Gate-Charge is 120 nC. This product features a 297 S of 500 S for high performance.

CSD19506KCS Image

CSD19506KCS

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD19506KCS Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD19506KCS
  • Packaging Tube
  • Unit-Weight 0.211644 oz
  • Mounting-Style Through Hole
  • Tradename NexFET
  • Package-Case TO-220-3
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 375 W
  • Maximum-Operating-Temperature + 175 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 10 ns
  • Rise-Time 11 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 273 A
  • Vds-Drain-Source-Breakdown-Voltage 80 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2.5 V
  • Rds-On-Drain-Source-Resistance 2.2 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 30 ns
  • Typical-Turn-On-Delay-Time 19 ns
  • Qg-Gate-Charge 120 nC
  • Forward-Transconductance-Min 297 S

CSD19506KCS

CSD19506KCS Specifications

CSD19506KCS FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed CSD19506KCS

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.211644 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-220-3.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 375 W

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 175 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 10 ns.

  • A: Is the cutoff frequency of the product Rise-Time?

    Q: Yes, the product's Rise-Time is indeed 11 ns

  • A: Is the cutoff frequency of the product Vgs-Gate-Source-Voltage?

    Q: Yes, the product's Vgs-Gate-Source-Voltage is indeed 20 V

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 273 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 80 V

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 2.5 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 2.2 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 30 ns

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 19 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 120 nC

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is 297 S.

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1
2,80 US$
2,80 US$
10
2,66 US$
26,65 US$
100
2,52 US$
252,45 US$
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2,38 US$
1 192,15 US$
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2 244,00 US$
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