CSD19503KCS

CSD19503KCS Overview

Product belongs to the CSD19503KCS series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style Trade name: NexFET. TO-220-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 188 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 2 ns of 16 ns. This product has a 3 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 94 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 80 V. This product has a 2.8 V Vgs-th gate-source threshold voltage for efficient power management. The 8.8 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11 ns This product has a 7 ns. Qg-Gate-Charge is 28 nC. This product features a 110 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance.

CSD19503KCS Image

CSD19503KCS Specifications

• Manufacturer Texas Instruments
• Product Category Transistors - FETs, MOSFETs - Single
• Series CSD19503KCS
• Packaging Tube
• Unit-Weight 0.211644 oz
• Mounting-Style Through Hole
• Tradename NexFET
• Package-Case TO-220-3
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 188 W
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 2 ns
• Rise-Time 3 ns
• Vgs-Gate-Source-Voltage 20 V
• Id-Continuous-Drain-Current 94 A
• Vds-Drain-Source-Breakdown-Voltage 80 V
• Vgs-th-Gate-Source-Threshold-Voltage 2.8 V
• Rds-On-Drain-Source-Resistance 8.8 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 11 ns
• Typical-Turn-On-Delay-Time 7 ns
• Qg-Gate-Charge 28 nC
• Forward-Transconductance-Min 110 S
• Channel-Mode Enhancement

CSD19503KCS FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed CSD19503KCS

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: What is the Unit-Weight of the product?

  Q: The Unit-Weight of the product is 0.211644 oz.

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is Through Hole.

• A: Is the cutoff frequency of the product Tradename?

  Q: Yes, the product's Tradename is indeed NexFET

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-220-3

• A: At what frequency does the Technology?

  Q: The product Technology is Si.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 188 W.

• A: What is the Maximum-Operating-Temperature of the product?

  Q: The Maximum-Operating-Temperature of the product is + 150 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: What is the Fall-Time of the product?

  Q: The Fall-Time of the product is 2 ns.

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 3 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 20 V.

• A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

  Q: Yes, the product's Id-Continuous-Drain-Current is indeed 94 A

• A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

  Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 80 V

• A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

  Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 2.8 V

• A: What is the Rds-On-Drain-Source-Resistance of the product?

  Q: The Rds-On-Drain-Source-Resistance of the product is 8.8 mOhms.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

  Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 11 ns

• A: Is the cutoff frequency of the product Typical-Turn-On-Delay-Time?

  Q: Yes, the product's Typical-Turn-On-Delay-Time is indeed 7 ns

• A: Is the cutoff frequency of the product Qg-Gate-Charge?

  Q: Yes, the product's Qg-Gate-Charge is indeed 28 nC

• A: Is the cutoff frequency of the product Forward-Transconductance-Min?

  Q: Yes, the product's Forward-Transconductance-Min is indeed 110 S

• A: What is the Channel-Mode of the product?

  Q: The Channel-Mode of the product is Enhancement.