CSD18542KTTT

CSD18542KTTT Overview

Product belongs to the CSD18542KTT series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. TO-263-3 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 250 W Maximum operating temperature of + 175 C Minimum operating temperature: - 55 C This product has a 2 ns of 16 ns. This product has a 4 ns of 16 ns. This product's +/- 20 V. The ID of continuous drain current is 200 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. This product has a 1.8 V Vgs-th gate-source threshold voltage for efficient power management. The 3.3 mOhm for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 2 ns This product has a 6 ns. Qg-Gate-Charge is 44 nC. This product features a 198 S of 500 S for high performance. This product operates in Enhancement channel mode for optimal performance. The -.

CSD18542KTTT Image

CSD18542KTTT Specifications

• Manufacturer Texas Instruments
• Product Category Transistors - FETs, MOSFETs - Single
• Series CSD18542KTT
• Packaging Reel
• Mounting-Style SMD/SMT
• Tradename NexFET
• Package-Case TO-263-3
• Technology Si
• Number-of-Channels 1 Channel
• Configuration Single
• Transistor-Type 1 N-Channel
• Pd-Power-Dissipation 250 W
• Maximum-Operating-Temperature + 175 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 2 ns
• Rise-Time 4 ns
• Vgs-Gate-Source-Voltage +/- 20 V
• Id-Continuous-Drain-Current 200 A
• Vds-Drain-Source-Breakdown-Voltage 60 V
• Vgs-th-Gate-Source-Threshold-Voltage 1.8 V
• Rds-On-Drain-Source-Resistance 3.3 mOhm
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 2 ns
• Typical-Turn-On-Delay-Time 6 ns
• Qg-Gate-Charge 44 nC
• Forward-Transconductance-Min 198 S
• Channel-Mode Enhancement
• Development-Kit -

CSD18542KTTT FAQ

• A: What is the Series of the product?

  Q: The Series of the product is CSD18542KTT.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Reel.

• A: Is the cutoff frequency of the product Mounting-Style?

  Q: Yes, the product's Mounting-Style is indeed SMD/SMT

• A: At what frequency does the Tradename?

  Q: The product Tradename is NexFET.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed TO-263-3

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: At what frequency does the Number-of-Channels?

  Q: The product Number-of-Channels is 1 Channel.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed 1 N-Channel

• A: Is the cutoff frequency of the product Pd-Power-Dissipation?

  Q: Yes, the product's Pd-Power-Dissipation is indeed 250 W

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 175 C.

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 55 C.

• A: At what frequency does the Fall-Time?

  Q: The product Fall-Time is 2 ns.

• A: Is the cutoff frequency of the product Rise-Time?

  Q: Yes, the product's Rise-Time is indeed 4 ns

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is +/- 20 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 200 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 60 V.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 1.8 V.

• A: At what frequency does the Rds-On-Drain-Source-Resistance?

  Q: The product Rds-On-Drain-Source-Resistance is 3.3 mOhm.

• A: Is the cutoff frequency of the product Transistor-Polarity?

  Q: Yes, the product's Transistor-Polarity is indeed N-Channel

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 2 ns.

• A: What is the Typical-Turn-On-Delay-Time of the product?

  Q: The Typical-Turn-On-Delay-Time of the product is 6 ns.

• A: At what frequency does the Qg-Gate-Charge?

  Q: The product Qg-Gate-Charge is 44 nC.

• A: What is the Forward-Transconductance-Min of the product?

  Q: The Forward-Transconductance-Min of the product is 198 S.

• A: Is the cutoff frequency of the product Channel-Mode?

  Q: Yes, the product's Channel-Mode is indeed Enhancement

• A: Is the cutoff frequency of the product Development-Kit?

  Q: Yes, the product's Development-Kit is indeed -