CSD17551Q3A

Mfr. #: CSD17551Q3A
Fabricante: Texas Instruments
Descripción: MOSFET N-CH 30V 12A 8VSON
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: CSD17551Q3A Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD17551Q3A Overview

Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 8-PowerVDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 8-SON (3.3x3.3) Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 30V This product has an 1370pF @ 15V value of 300pF @ 25V. This product's Standard. 12A (Tc) continuous drain-ID current at 25°C; This product has an 9 mOhm @ 11A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 2.6 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3.4 ns of 16 ns. This product has a 24 ns of 16 ns. This product's 20 V. The ID of continuous drain current is 48 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 1.6 V Vgs-th gate-source threshold voltage for efficient power management. The 11.8 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 12 ns This product has a 8 ns. Qg-Gate-Charge is 6 nC. This product features a 101 S of 500 S for high performance.

CSD17551Q3A Image

CSD17551Q3A

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD17551Q3A Specifications
  • Manufacturer Texas Instruments
  • Product Category FETs - Single
  • Series NexFET
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case 8-PowerVDFN
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Surface Mount
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package 8-SON (3.3x3.3)
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 2.6W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 30V
  • Input-Capacitance-Ciss-Vds 1370pF @ 15V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 12A (Tc)
  • Rds-On-Max-Id-Vgs 9 mOhm @ 11A, 10V
  • Vgs-th-Max-Id 2.1V @ 250μA
  • Gate-Charge-Qg-Vgs 7.8nC @ 4.5V
  • Pd-Power-Dissipation 2.6 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 3.4 ns
  • Rise-Time 24 ns
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 48 A
  • Vds-Drain-Source-Breakdown-Voltage 30 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.6 V
  • Rds-On-Drain-Source-Resistance 11.8 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 12 ns
  • Typical-Turn-On-Delay-Time 8 ns
  • Qg-Gate-Charge 6 nC
  • Forward-Transconductance-Min 101 S

CSD17551Q3A

CSD17551Q3A Specifications

CSD17551Q3A FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed NexFET

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: At what frequency does the Tradename?

    Q: The product Tradename is NexFET.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is 8-PowerVDFN.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Operating-Temperature of the product?

    Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Surface Mount

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is 8-SON (3.3x3.3).

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: At what frequency does the FET-Type?

    Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: What is the Drain-to-Source-Voltage-Vdss of the product?

    Q: The Drain-to-Source-Voltage-Vdss of the product is 30V.

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 1370pF @ 15V.

  • A: What is the FET-Feature of the product?

    Q: The FET-Feature of the product is Standard.

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 12A (Tc).

  • A: At what frequency does the Rds-On-Max-Id-Vgs?

    Q: The product Rds-On-Max-Id-Vgs is 9 mOhm @ 11A, 10V.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 2.6 W

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: At what frequency does the Fall-Time?

    Q: The product Fall-Time is 3.4 ns.

  • A: At what frequency does the Rise-Time?

    Q: The product Rise-Time is 24 ns.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 48 A

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 30 V

  • A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

    Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 1.6 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 11.8 mOhms

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: What is the Typical-Turn-Off-Delay-Time of the product?

    Q: The Typical-Turn-Off-Delay-Time of the product is 12 ns.

  • A: What is the Typical-Turn-On-Delay-Time of the product?

    Q: The Typical-Turn-On-Delay-Time of the product is 8 ns.

  • A: At what frequency does the Qg-Gate-Charge?

    Q: The product Qg-Gate-Charge is 6 nC.

  • A: What is the Forward-Transconductance-Min of the product?

    Q: The Forward-Transconductance-Min of the product is 101 S.

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