CSD17483F4

CSD17483F4 Overview

Product belongs to the NexFET series. Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: FemtoFET. 3-XFDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 3-PICOSTAR Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 30V This product has an 190pF @ 15V value of 300pF @ 25V. This product's Standard. 1.5A (Ta) continuous drain-ID current at 25°C; This product has an 240 mOhm @ 500mA, 8V of 12 Ohm @ 150mA, 0V. Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3.4 ns of 16 ns. This product has a 1.3 ns of 16 ns. This product's 12 V. The ID of continuous drain current is 5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 30 V. This product has a 850 mV Vgs-th gate-source threshold voltage for efficient power management. The 260 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 10.6 ns This product has a 3.3 ns. Qg-Gate-Charge is 1.01 nC. This product features a 2.4 S of 500 S for high performance.

CSD17483F4 Image

CSD17483F4 Specifications

• Manufacturer Texas Instruments
• Product Category FETs - Single
• Series NexFET
• Packaging Alternate Packaging
• Mounting-Style SMD/SMT
• Tradename FemtoFET
• Package-Case 3-XFDFN
• Technology Si
• Operating-Temperature -55°C ~ 150°C (TJ)
• Mounting-Type Surface Mount
• Number-of-Channels 1 Channel
• Supplier-Device-Package 3-PICOSTAR
• Configuration Single
• FET-Type MOSFET N-Channel, Metal Oxide
• Power-Max 500mW
• Transistor-Type 1 N-Channel
• Drain-to-Source-Voltage-Vdss 30V
• Input-Capacitance-Ciss-Vds 190pF @ 15V
• FET-Feature Standard
• Current-Continuous-Drain-Id-25°C 1.5A (Ta)
• Rds-On-Max-Id-Vgs 240 mOhm @ 500mA, 8V
• Vgs-th-Max-Id 1.1V @ 250μA
• Gate-Charge-Qg-Vgs 1.3nC @ 4.5V
• Pd-Power-Dissipation 500 mW
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 55 C
• Fall-Time 3.4 ns
• Rise-Time 1.3 ns
• Vgs-Gate-Source-Voltage 12 V
• Id-Continuous-Drain-Current 5 A
• Vds-Drain-Source-Breakdown-Voltage 30 V
• Vgs-th-Gate-Source-Threshold-Voltage 850 mV
• Rds-On-Drain-Source-Resistance 260 mOhms
• Transistor-Polarity N-Channel
• Typical-Turn-Off-Delay-Time 10.6 ns
• Typical-Turn-On-Delay-Time 3.3 ns
• Qg-Gate-Charge 1.01 nC
• Forward-Transconductance-Min 2.4 S

CSD17483F4 FAQ

• A: Is the cutoff frequency of the product Series?

  Q: Yes, the product's Series is indeed NexFET

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Alternate Packaging

• A: What is the Mounting-Style of the product?

  Q: The Mounting-Style of the product is SMD/SMT.

• A: What is the Tradename of the product?

  Q: The Tradename of the product is FemtoFET.

• A: What is the Package-Case of the product?

  Q: The Package-Case of the product is 3-XFDFN.

• A: What is the Technology of the product?

  Q: The Technology of the product is Si.

• A: At what frequency does the Operating-Temperature?

  Q: The product Operating-Temperature is -55°C ~ 150°C (TJ).

• A: What is the Mounting-Type of the product?

  Q: The Mounting-Type of the product is Surface Mount.

• A: What is the Number-of-Channels of the product?

  Q: The Number-of-Channels of the product is 1 Channel.

• A: What is the Supplier-Device-Package of the product?

  Q: The Supplier-Device-Package of the product is 3-PICOSTAR.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: Is the cutoff frequency of the product FET-Type?

  Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

• A: At what frequency does the Transistor-Type?

  Q: The product Transistor-Type is 1 N-Channel.

• A: At what frequency does the Drain-to-Source-Voltage-Vdss?

  Q: The product Drain-to-Source-Voltage-Vdss is 30V.

• A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

  Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 190pF @ 15V

• A: Is the cutoff frequency of the product FET-Feature?

  Q: Yes, the product's FET-Feature is indeed Standard

• A: At what frequency does the Current-Continuous-Drain-Id-25°C?

  Q: The product Current-Continuous-Drain-Id-25°C is 1.5A (Ta).

• A: What is the Rds-On-Max-Id-Vgs of the product?

  Q: The Rds-On-Max-Id-Vgs of the product is 240 mOhm @ 500mA, 8V.

• A: At what frequency does the Pd-Power-Dissipation?

  Q: The product Pd-Power-Dissipation is 500 mW.

• A: At what frequency does the Maximum-Operating-Temperature?

  Q: The product Maximum-Operating-Temperature is + 150 C.

• A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

  Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

• A: Is the cutoff frequency of the product Fall-Time?

  Q: Yes, the product's Fall-Time is indeed 3.4 ns

• A: What is the Rise-Time of the product?

  Q: The Rise-Time of the product is 1.3 ns.

• A: At what frequency does the Vgs-Gate-Source-Voltage?

  Q: The product Vgs-Gate-Source-Voltage is 12 V.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 5 A.

• A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

  Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 30 V.

• A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?

  Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 850 mV.

• A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

  Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 260 mOhms

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: What is the Typical-Turn-Off-Delay-Time of the product?

  Q: The Typical-Turn-Off-Delay-Time of the product is 10.6 ns.

• A: At what frequency does the Typical-Turn-On-Delay-Time?

  Q: The product Typical-Turn-On-Delay-Time is 3.3 ns.

• A: What is the Qg-Gate-Charge of the product?

  Q: The Qg-Gate-Charge of the product is 1.01 nC.

• A: What is the Forward-Transconductance-Min of the product?

  Q: The Forward-Transconductance-Min of the product is 2.4 S.