CSD16322Q5

Mfr. #: CSD16322Q5
Fabricante: Texas Instruments
Descripción: MOSFET N-CH 25V 5X6 8SON
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: CSD16322Q5 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD16322Q5 Overview

Product belongs to the CSD16322Q5 series. Reel is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. VSON-Clip-8 Si is the technology used. Number of channels: 1 Channel Configuration Single Transistor type: 1 N-Channel Power-off control: 3.1 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3.7 ns of 16 ns. This product has a 10.7 ns of 16 ns. This product's 10 V. The ID of continuous drain current is 21 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 25 V. This product has a 1.1 V Vgs-th gate-source threshold voltage for efficient power management. The 4.6 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 12.3 ns This product has a 6.1 ns. Qg-Gate-Charge is 6.8 nC. This product features a 106 S of 500 S for high performance.

CSD16322Q5 Image

CSD16322Q5

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD16322Q5 Specifications
  • Manufacturer Texas Instruments
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series CSD16322Q5
  • Packaging Reel
  • Mounting-Style SMD/SMT
  • Tradename NexFET
  • Package-Case VSON-Clip-8
  • Technology Si
  • Number-of-Channels 1 Channel
  • Configuration Single
  • Transistor-Type 1 N-Channel
  • Pd-Power-Dissipation 3.1 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Fall-Time 3.7 ns
  • Rise-Time 10.7 ns
  • Vgs-Gate-Source-Voltage 10 V
  • Id-Continuous-Drain-Current 21 A
  • Vds-Drain-Source-Breakdown-Voltage 25 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.1 V
  • Rds-On-Drain-Source-Resistance 4.6 mOhms
  • Transistor-Polarity N-Channel
  • Typical-Turn-Off-Delay-Time 12.3 ns
  • Typical-Turn-On-Delay-Time 6.1 ns
  • Qg-Gate-Charge 6.8 nC
  • Forward-Transconductance-Min 106 S

CSD16322Q5

CSD16322Q5 Specifications

CSD16322Q5 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed CSD16322Q5

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed SMD/SMT

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is VSON-Clip-8.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Number-of-Channels?

    Q: The product Number-of-Channels is 1 Channel.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 3.1 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 55 C.

  • A: What is the Fall-Time of the product?

    Q: The Fall-Time of the product is 3.7 ns.

  • A: What is the Rise-Time of the product?

    Q: The Rise-Time of the product is 10.7 ns.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 10 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 21 A.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 25 V

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 1.1 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 4.6 mOhms.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?

    Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 12.3 ns

  • A: At what frequency does the Typical-Turn-On-Delay-Time?

    Q: The product Typical-Turn-On-Delay-Time is 6.1 ns.

  • A: Is the cutoff frequency of the product Qg-Gate-Charge?

    Q: Yes, the product's Qg-Gate-Charge is indeed 6.8 nC

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is 106 S.

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