| Mfr. #: | CSD13381F4 |
|---|---|
| Fabricante: | Texas Instruments |
| Descripción: | MOSFET N-CH 12V 2.1A 3PICOSTAR |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | CSD13381F4 Ficha de datos |
Product belongs to the NexFET series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style Trade name: NexFET. 3-XFDFN Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Surface Mount mounting type Number of channels: 1 Channel Supplier device package: 3-PICOSTAR Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 12V This product has an 200pF @ 6V value of 300pF @ 25V. This product's Standard. 2.1A (Ta) continuous drain-ID current at 25°C; This product has an 180 mOhm @ 500mA, 4.5V of 12 Ohm @ 150mA, 0V. Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product has a 3.8 ns of 16 ns. This product has a 1.5 ns of 16 ns. This product's 8 V. The ID of continuous drain current is 7 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 12 V. This product has a 850 mV Vgs-th gate-source threshold voltage for efficient power management. The 180 mOhms for this product is 12 Ohms. The transistor polarity is N-Channel. 'Typical-Turn-Off-Delay-Time' of 11 ns This product has a 3.7 ns. Qg-Gate-Charge is 1.06 nC.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD13381F4 Specifications
A: What is the Series of the product?
Q: The Series of the product is NexFET.
A: At what frequency does the Packaging?
Q: The product Packaging is Digi-ReelR Alternate Packaging.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: What is the Tradename of the product?
Q: The Tradename of the product is NexFET.
A: What is the Package-Case of the product?
Q: The Package-Case of the product is 3-XFDFN.
A: At what frequency does the Technology?
Q: The product Technology is Si.
A: What is the Operating-Temperature of the product?
Q: The Operating-Temperature of the product is -55°C ~ 150°C (TJ).
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Surface Mount
A: Is the cutoff frequency of the product Number-of-Channels?
Q: Yes, the product's Number-of-Channels is indeed 1 Channel
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed 3-PICOSTAR
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: Is the cutoff frequency of the product FET-Type?
Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is 1 N-Channel.
A: At what frequency does the Drain-to-Source-Voltage-Vdss?
Q: The product Drain-to-Source-Voltage-Vdss is 12V.
A: What is the Input-Capacitance-Ciss-Vds of the product?
Q: The Input-Capacitance-Ciss-Vds of the product is 200pF @ 6V.
A: At what frequency does the FET-Feature?
Q: The product FET-Feature is Standard.
A: Is the cutoff frequency of the product Current-Continuous-Drain-Id-25°C?
Q: Yes, the product's Current-Continuous-Drain-Id-25°C is indeed 2.1A (Ta)
A: What is the Rds-On-Max-Id-Vgs of the product?
Q: The Rds-On-Max-Id-Vgs of the product is 180 mOhm @ 500mA, 4.5V.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 500 mW
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: At what frequency does the Minimum-Operating-Temperature?
Q: The product Minimum-Operating-Temperature is - 55 C.
A: At what frequency does the Fall-Time?
Q: The product Fall-Time is 3.8 ns.
A: At what frequency does the Rise-Time?
Q: The product Rise-Time is 1.5 ns.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is 8 V.
A: What is the Id-Continuous-Drain-Current of the product?
Q: The Id-Continuous-Drain-Current of the product is 7 A.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 12 V.
A: What is the Vgs-th-Gate-Source-Threshold-Voltage of the product?
Q: The Vgs-th-Gate-Source-Threshold-Voltage of the product is 850 mV.
A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?
Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 180 mOhms
A: What is the Transistor-Polarity of the product?
Q: The Transistor-Polarity of the product is N-Channel.
A: Is the cutoff frequency of the product Typical-Turn-Off-Delay-Time?
Q: Yes, the product's Typical-Turn-Off-Delay-Time is indeed 11 ns
A: At what frequency does the Typical-Turn-On-Delay-Time?
Q: The product Typical-Turn-On-Delay-Time is 3.7 ns.
A: What is the Qg-Gate-Charge of the product?
Q: The Qg-Gate-Charge of the product is 1.06 nC.