BUTW92

Mfr. #: BUTW92
Fabricante: STMicroelectronics
Descripción: Bipolar Transistors - BJT NPN Hi-Curr High Spd
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: BUTW92 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BUTW92 Overview

Product belongs to the 500V Transistors series. Tube is the packaging method for this product Weight of 0.229281 oz Through Hole Mounting-Style TO-247-3 Through Hole mounting type Supplier device package: TO-247-3 Configuration Single Transistor type: NPN Maximum current collector Ic is 45A . Maximum collector-emitter breakdown voltage of 250V DC current gain minimum (hFE) of Ic/Vce at 9 @ 60A, 3V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1V @ 15A, 60A Power-off control: 180 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 250 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 0.8 V The 500 V voltage rating is 40 V. 7 V rating of 5 V This product is capable of handling a 60 A continuous collector current. Minimum hfe for DC collector-base gain is 9. 65 of 605.

BUTW92 Image

BUTW92

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BUTW92 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single, Pre-Biased
  • Series 500V Transistors
  • Packaging Tube
  • Unit-Weight 0.229281 oz
  • Mounting-Style Through Hole
  • Package-Case TO-247-3
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-247-3
  • Configuration Single
  • Power-Max 180W
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 45A
  • Voltage-Collector-Emitter-Breakdown-Max 250V
  • DC-Current-Gain-hFE-Min-Ic-Vce 9 @ 60A, 3V
  • Vce-Saturation-Max-Ib-Ic 1V @ 15A, 60A
  • Current-Collector-Cutoff-Max 50μA
  • Frequency-Transition -
  • Pd-Power-Dissipation 180 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 250 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 0.8 V
  • Collector-Base-Voltage-VCBO 500 V
  • Emitter-Base-Voltage-VEBO 7 V
  • Continuous-Collector-Current 60 A
  • DC-Collector-Base-Gain-hfe-Min 9
  • DC-Current-Gain-hFE-Max 65

BUTW92

BUTW92 Specifications

BUTW92 FAQ
  • A: At what frequency does the Series?

    Q: The product Series is 500V Transistors.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.229281 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is Through Hole.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-247-3

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is TO-247-3.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is NPN.

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 45A.

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 250V.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 9 @ 60A, 3V

  • A: At what frequency does the Vce-Saturation-Max-Ib-Ic?

    Q: The product Vce-Saturation-Max-Ib-Ic is 1V @ 15A, 60A.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 180 W

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 65 C.

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 250 V

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is NPN.

  • A: At what frequency does the Collector-Emitter-Saturation-Voltage?

    Q: The product Collector-Emitter-Saturation-Voltage is 0.8 V.

  • A: Is the cutoff frequency of the product Collector-Base-Voltage-VCBO?

    Q: Yes, the product's Collector-Base-Voltage-VCBO is indeed 500 V

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 7 V.

  • A: What is the Continuous-Collector-Current of the product?

    Q: The Continuous-Collector-Current of the product is 60 A.

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 9.

  • A: At what frequency does the DC-Current-Gain-hFE-Max?

    Q: The product DC-Current-Gain-hFE-Max is 65.

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1
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5,84 US$
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525,15 US$
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