| Mfr. #: | BUL416T |
|---|---|
| Fabricante: | STMicroelectronics |
| Descripción: | Bipolar Transistors - BJT NPN HI-VOLT FAST SW |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | BUL416T Ficha de datos |
Product belongs to the 1000V Transistors series. Tube is the packaging method for this product Weight of 0.081130 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Transistor type: NPN Maximum current collector Ic is 6A . Maximum collector-emitter breakdown voltage of 800V DC current gain minimum (hFE) of Ic/Vce at 18 @ 700mA, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.5V @ 1.33A, 4A Power-off control: 110 W Maximum operating temperature of + 150 C Rated VCEO up to 800 V The transistor polarity is NPN. 9 V rating of 5 V Max DC collector current: 9 A This product is capable of handling a 6 A continuous collector current. Minimum hfe for DC collector-base gain is 18. 32 of 605.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BUL416T Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed 1000V Transistors
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.081130 oz.
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-220-3
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Through Hole.
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is TO-220AB.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed NPN
A: Is the cutoff frequency of the product Current-Collector-Ic-Max?
Q: Yes, the product's Current-Collector-Ic-Max is indeed 6A
A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?
Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 800V.
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 18 @ 700mA, 5V.
A: What is the Vce-Saturation-Max-Ib-Ic of the product?
Q: The Vce-Saturation-Max-Ib-Ic of the product is 1.5V @ 1.33A, 4A.
A: Is the cutoff frequency of the product Pd-Power-Dissipation?
Q: Yes, the product's Pd-Power-Dissipation is indeed 110 W
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?
Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 800 V.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed NPN
A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?
Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 9 V
A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?
Q: Yes, the product's Maximum-DC-Collector-Current is indeed 9 A
A: What is the Continuous-Collector-Current of the product?
Q: The Continuous-Collector-Current of the product is 6 A.
A: What is the DC-Collector-Base-Gain-hfe-Min of the product?
Q: The DC-Collector-Base-Gain-hfe-Min of the product is 18.
A: What is the DC-Current-Gain-hFE-Max of the product?
Q: The DC-Current-Gain-hFE-Max of the product is 32.