| Mfr. #: | BUL39D |
|---|---|
| Fabricante: | STMicroelectronics |
| Descripción: | Bipolar Transistors - BJT NPN Hi-Volt Fast Sw |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | BUL39D Ficha de datos |
Product belongs to the 500V Transistors series. Tube is the packaging method for this product Weight of 0.211644 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Configuration Single Transistor type: NPN Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 450V DC current gain minimum (hFE) of Ic/Vce at 10 @ 10mA, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.1V @ 500mA, 2.5A Power-off control: 70 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 450 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 1.1 V The 800 V voltage rating is 40 V. 9 V rating of 5 V Max DC collector current: 4 A This product is capable of handling a 4 A continuous collector current. Minimum hfe for DC collector-base gain is 4.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BUL39D Specifications
A: At what frequency does the Series?
Q: The product Series is 500V Transistors.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.211644 oz
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-220-3
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed TO-220AB
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is NPN.
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 4A.
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 450V
A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?
Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 10 @ 10mA, 5V
A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?
Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 1.1V @ 500mA, 2.5A
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 70 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 65 C.
A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?
Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 450 V
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is NPN.
A: Is the cutoff frequency of the product Collector-Emitter-Saturation-Voltage?
Q: Yes, the product's Collector-Emitter-Saturation-Voltage is indeed 1.1 V
A: What is the Collector-Base-Voltage-VCBO of the product?
Q: The Collector-Base-Voltage-VCBO of the product is 800 V.
A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?
Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 9 V
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 4 A.
A: At what frequency does the Continuous-Collector-Current?
Q: The product Continuous-Collector-Current is 4 A.
A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?
Q: The product DC-Collector-Base-Gain-hfe-Min is 4.