BFU550R

Mfr. #: BFU550R
Fabricante: NXP Semiconductors
Descripción: RF Bipolar Transistors Dual NPN wideband Silicon RFtransisto
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: BFU550R Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BFU550R Overview

Product belongs to the Automotive, AEC-Q101 series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style TO-253-4, TO-253AA Si is the technology used. Surface Mount mounting type Supplier device package: SOT-143B Configuration Dual Transistor type: NPN Maximum current collector Ic is 50mA . Maximum collector-emitter breakdown voltage of 12V DC current gain minimum (hFE) of Ic/Vce at 60 @ 15mA, 8V. 0.7dB @ 900MHz typical noise figure The device offers a 21dB of 26dB. Power-off control: 450 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 40 C The operating frequency is 900 MHz. Rated VCEO up to 16 V The transistor polarity is NPN. 2 V rating of 5 V Max DC collector current: 80 mA This product is capable of handling a 15 mA continuous collector current. Minimum hfe for DC collector-base gain is 60.

BFU550R Image

BFU550R

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BFU550R Specifications
  • Manufacturer NXP Semiconductors
  • Product Category Transistors - Bipolar (BJT) - RF
  • Series Automotive, AEC-Q101
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Package-Case TO-253-4, TO-253AA
  • Technology Si
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-143B
  • Configuration Dual
  • Power-Max 450mW
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 50mA
  • Voltage-Collector-Emitter-Breakdown-Max 12V
  • DC-Current-Gain-hFE-Min-Ic-Vce 60 @ 15mA, 8V
  • Frequency-Transition 11GHz
  • Noise-Figure-dB-Typ-f 0.7dB @ 900MHz
  • Gain 21dB
  • Pd-Power-Dissipation 450 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 40 C
  • Operating-Frequency 900 MHz
  • Collector-Emitter-Voltage-VCEO-Max 16 V
  • Transistor-Polarity NPN
  • Emitter-Base-Voltage-VEBO 2 V
  • Maximum-DC-Collector-Current 80 mA
  • Continuous-Collector-Current 15 mA
  • DC-Collector-Base-Gain-hfe-Min 60

BFU550R

BFU550R Specifications

BFU550R FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed Automotive, AEC-Q101

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Digi-ReelR Alternate Packaging.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-253-4, TO-253AA

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Surface Mount

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is SOT-143B.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual.

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is NPN.

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 50mA.

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 12V.

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 60 @ 15mA, 8V.

  • A: At what frequency does the Noise-Figure-dB-Typ-f?

    Q: The product Noise-Figure-dB-Typ-f is 0.7dB @ 900MHz.

  • A: At what frequency does the Gain?

    Q: The product Gain is 21dB.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 450 mW.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 40 C.

  • A: At what frequency does the Operating-Frequency?

    Q: The product Operating-Frequency is 900 MHz.

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 16 V

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is NPN.

  • A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?

    Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 2 V

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 80 mA.

  • A: What is the Continuous-Collector-Current of the product?

    Q: The Continuous-Collector-Current of the product is 15 mA.

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 60.

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