BFU520XRR

Mfr. #: BFU520XRR
Fabricante: NXP Semiconductors
Descripción: RF Bipolar Transistors Dual NPN wideband Silicon RFtransisto
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: BFU520XRR Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BFU520XRR Overview

Product belongs to the Automotive, AEC-Q101 series. Digi-ReelR Alternate Packaging is the packaging method for this product SMD/SMT Mounting-Style SOT-143R Si is the technology used. Surface Mount mounting type Supplier device package: SOT-143R Configuration Dual Transistor type: NPN Maximum current collector Ic is 30mA . Maximum collector-emitter breakdown voltage of 12V DC current gain minimum (hFE) of Ic/Vce at 60 @ 5mA, 8V. 0.65dB @ 900MHz typical noise figure The device offers a 20dB of 26dB. Power-off control: 450 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 40 C The operating frequency is 900 MHz. Rated VCEO up to 16 V The transistor polarity is NPN. 2 V rating of 5 V Max DC collector current: 50 mA This product is capable of handling a 5 mA continuous collector current. Minimum hfe for DC collector-base gain is 60.

BFU520XRR Image

BFU520XRR

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BFU520XRR Specifications
  • Manufacturer NXP
  • Product Category Transistors - Bipolar (BJT) - RF
  • Series Automotive, AEC-Q101
  • Packaging Digi-ReelR Alternate Packaging
  • Mounting-Style SMD/SMT
  • Package-Case SOT-143R
  • Technology Si
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-143R
  • Configuration Dual
  • Power-Max 450mW
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 30mA
  • Voltage-Collector-Emitter-Breakdown-Max 12V
  • DC-Current-Gain-hFE-Min-Ic-Vce 60 @ 5mA, 8V
  • Frequency-Transition 10.5GHz
  • Noise-Figure-dB-Typ-f 0.65dB @ 900MHz
  • Gain 20dB
  • Pd-Power-Dissipation 450 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 40 C
  • Operating-Frequency 900 MHz
  • Collector-Emitter-Voltage-VCEO-Max 16 V
  • Transistor-Polarity NPN
  • Emitter-Base-Voltage-VEBO 2 V
  • Maximum-DC-Collector-Current 50 mA
  • Continuous-Collector-Current 5 mA
  • DC-Collector-Base-Gain-hfe-Min 60

BFU520XRR

BFU520XRR Specifications

BFU520XRR FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed Automotive, AEC-Q101

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is SOT-143R.

  • A: Is the cutoff frequency of the product Technology?

    Q: Yes, the product's Technology is indeed Si

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is SOT-143R.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Dual.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is NPN.

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 30mA.

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 12V.

  • A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?

    Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 60 @ 5mA, 8V.

  • A: What is the Noise-Figure-dB-Typ-f of the product?

    Q: The Noise-Figure-dB-Typ-f of the product is 0.65dB @ 900MHz.

  • A: Is the cutoff frequency of the product Gain?

    Q: Yes, the product's Gain is indeed 20dB

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 450 mW.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 40 C.

  • A: At what frequency does the Operating-Frequency?

    Q: The product Operating-Frequency is 900 MHz.

  • A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?

    Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 16 V

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 2 V.

  • A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?

    Q: Yes, the product's Maximum-DC-Collector-Current is indeed 50 mA

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 5 mA

  • A: What is the DC-Collector-Base-Gain-hfe-Min of the product?

    Q: The DC-Collector-Base-Gain-hfe-Min of the product is 60.

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