| Mfr. #: | BFG480W,135 |
|---|---|
| Fabricante: | NXP Semiconductors |
| Descripción: | RF Bipolar Transistors Single NPN 4.5V 250mA 360mW 40 21GHz |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | BFG480W,135 Ficha de datos |
Product belongs to the - series. Tape & Reel (TR) Alternate Packaging is the packaging method for this product SC-82A, SOT-343 Surface Mount mounting type Supplier device package: CMPAK-4 Transistor type: NPN Maximum current collector Ic is 250mA . Maximum collector-emitter breakdown voltage of 4.5V DC current gain minimum (hFE) of Ic/Vce at 40 @ 80mA, 2V. 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz typical noise figure The device offers a 16dB of 26dB.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BFG480W,135 Specifications
A: At what frequency does the Series?
Q: The product Series is -.
A: At what frequency does the Packaging?
Q: The product Packaging is Tape & Reel (TR) Alternate Packaging.
A: At what frequency does the Package-Case?
Q: The product Package-Case is SC-82A, SOT-343.
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Surface Mount.
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is CMPAK-4.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is NPN.
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 250mA.
A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?
Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 4.5V.
A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?
Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 40 @ 80mA, 2V.
A: What is the Noise-Figure-dB-Typ-f of the product?
Q: The Noise-Figure-dB-Typ-f of the product is 1.2dB ~ 1.8dB @ 900MHz ~ 2GHz.
A: What is the Gain of the product?
Q: The Gain of the product is 16dB.