| Mfr. #: | BFG35,115 |
|---|---|
| Fabricante: | NXP Semiconductors |
| Descripción: | RF Bipolar Transistors NPN 10V 150mA 4GHZ |
| Ciclo vital: | Nuevo de este fabricante. |
| Ficha de datos: | BFG35,115 Ficha de datos |
Product belongs to the - series. Digi-ReelR Alternate Packaging is the packaging method for this product TO-261-4, TO-261AA Surface Mount mounting type Supplier device package: SC-73 Transistor type: NPN Maximum current collector Ic is 150mA . Maximum collector-emitter breakdown voltage of 18V DC current gain minimum (hFE) of Ic/Vce at 25 @ 100mA, 10V. - typical noise figure The device offers a - of 26dB.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BFG35,115 Specifications
A: Is the cutoff frequency of the product Series?
Q: Yes, the product's Series is indeed -
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Digi-ReelR Alternate Packaging
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-261-4, TO-261AA.
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Surface Mount
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed SC-73
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is NPN.
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 150mA.
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 18V
A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?
Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 25 @ 100mA, 10V
A: What is the Noise-Figure-dB-Typ-f of the product?
Q: The Noise-Figure-dB-Typ-f of the product is -.
A: What is the Gain of the product?
Q: The Gain of the product is -.