Mfr. #: | AFT09MS031GNR1 |
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Fabricante: | NXP Semiconductors |
Descripción: | RF MOSFET Transistors MV9 800MHZ13.6V |
Ciclo vital: | Nuevo de este fabricante. |
Ficha de datos: | AFT09MS031GNR1 Ficha de datos |
Product belongs to the AFT09MS031N series. Type: RF Power MOSFET Reel is the packaging method for this product Weight of 0.019330 oz SMD/SMT Mounting-Style TO-270-2 Gull Si is the technology used. The device offers a 18.5 dB of 26dB. The operating frequency is 764 MHz to 941 MHz. This product's - 6 V + 12 V. This product has a Vds-Drain-Source-Breakdown-Voltageof - 0.5 V + 40 V.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
AFT09MS031GNR1 Specifications
A: At what frequency does the Series?
Q: The product Series is AFT09MS031N.
A: What is the Type of the product?
Q: The Type of the product is RF Power MOSFET.
A: At what frequency does the Packaging?
Q: The product Packaging is Reel.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.019330 oz
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed SMD/SMT
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-270-2 Gull.
A: What is the Technology of the product?
Q: The Technology of the product is Si.
A: What is the Gain of the product?
Q: The Gain of the product is 18.5 dB.
A: What is the Operating-Frequency of the product?
Q: The Operating-Frequency of the product is 764 MHz to 941 MHz.
A: At what frequency does the Vgs-Gate-Source-Voltage?
Q: The product Vgs-Gate-Source-Voltage is - 6 V + 12 V.
A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?
Q: The Vds-Drain-Source-Breakdown-Voltage of the product is - 0.5 V + 40 V.