Mfr. #: | STGWA80H65DFB |
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Fabricante: | STMicroelectronics |
Descripción: | IGBT Transistors IGBT & Power Bipolar |
Ciclo vital: | Nuevo de este fabricante. |
Ficha de datos: | STGWA80H65DFB Ficha de datos |
This product is manufactured by STMicroelectronics. TO-247-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 650 V. The 2 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 120 A 469 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Max continuous collector current of 80 A The height of the product is 5.3 mm. 20.3 mm long STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory 1. 1.340411 oz of Unit Weight
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
STGWA80H65DFB Specifications
A: What is the Manufacturer of the product?
Q: The Manufacturer of the product is STMicroelectronics.
A: At what frequency does the Package / Case?
Q: The product Package / Case is TO-247-3.
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed Through Hole
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: What is the Collector- Emitter Voltage VCEO Max of the product?
Q: The Collector- Emitter Voltage VCEO Max of the product is 650 V.
A: Is the cutoff frequency of the product Collector-Emitter Saturation Voltage?
Q: Yes, the product's Collector-Emitter Saturation Voltage is indeed 2 V
A: At what frequency does the Maximum Gate Emitter Voltage?
Q: The product Maximum Gate Emitter Voltage is 20 V.
A: What is the Continuous Collector Current at 25 C of the product?
Q: The Continuous Collector Current at 25 C of the product is 120 A.
A: Is the cutoff frequency of the product Pd - Power Dissipation?
Q: Yes, the product's Pd - Power Dissipation is indeed 469 W
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 55 C.
A: What is the Maximum Operating Temperature of the product?
Q: The Maximum Operating Temperature of the product is + 175 C.
A: What is the Continuous Collector Current Ic Max of the product?
Q: The Continuous Collector Current Ic Max of the product is 80 A.
A: Is the cutoff frequency of the product Height?
Q: Yes, the product's Height is indeed 5.3 mm
A: At what frequency does the Length?
Q: The product Length is 20.3 mm.
A: What is the Brand of the product?
Q: The Brand of the product is STMicroelectronics.
A: What is the Gate-Emitter Leakage Current of the product?
Q: The Gate-Emitter Leakage Current of the product is 250 nA.
A: What is the Product Type of the product?
Q: The Product Type of the product is IGBT Transistors.
A: At what frequency does the Factory Pack Quantity?
Q: The product Factory Pack Quantity is 600.
A: At what frequency does the Subcategory?
Q: The product Subcategory is IGBTs.
A: What is the Unit Weight of the product?
Q: The Unit Weight of the product is 1.340411 oz.