STGWA30H65DFB

Mfr. #: STGWA30H65DFB
Fabricante: STMicroelectronics
Descripción: IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a TO-247 long leads package
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: STGWA30H65DFB Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STGWA30H65DFB Overview

This product is manufactured by STMicroelectronics. TO-247-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 650 V. The 1.55 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 60 A 260 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory

STGWA30H65DFB Image

STGWA30H65DFB

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STGWA30H65DFB Specifications
  • Manufacturer: STMicroelectronics
  • Product Category: IGBT Transistors
  • Technology: Si
  • Package / Case: TO-247-3
  • Mounting Style: Through Hole
  • Configuration: Single
  • Collector- Emitter Voltage VCEO Max: 650 V
  • Collector-Emitter Saturation Voltage: 1.55 V
  • Maximum Gate Emitter Voltage: 20 V
  • Continuous Collector Current at 25 C: 60 A
  • Pd - Power Dissipation: 260 W
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 175 C
  • Series: STGWA30H65DFB
  • Brand: STMicroelectronics
  • Gate-Emitter Leakage Current: 250 nA
  • Product Type: IGBT Transistors
  • Factory Pack Quantity: 600
  • Subcategory: IGBTs

STGWA30H65DFB

STGWA30H65DFB Specifications

STGWA30H65DFB FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed STMicroelectronics

  • A: What is the Package / Case of the product?

    Q: The Package / Case of the product is TO-247-3.

  • A: Is the cutoff frequency of the product Mounting Style?

    Q: Yes, the product's Mounting Style is indeed Through Hole

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?

    Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 650 V

  • A: Is the cutoff frequency of the product Collector-Emitter Saturation Voltage?

    Q: Yes, the product's Collector-Emitter Saturation Voltage is indeed 1.55 V

  • A: At what frequency does the Maximum Gate Emitter Voltage?

    Q: The product Maximum Gate Emitter Voltage is 20 V.

  • A: What is the Continuous Collector Current at 25 C of the product?

    Q: The Continuous Collector Current at 25 C of the product is 60 A.

  • A: At what frequency does the Pd - Power Dissipation?

    Q: The product Pd - Power Dissipation is 260 W.

  • A: At what frequency does the Minimum Operating Temperature?

    Q: The product Minimum Operating Temperature is - 55 C.

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 175 C.

  • A: At what frequency does the Brand?

    Q: The product Brand is STMicroelectronics.

  • A: At what frequency does the Gate-Emitter Leakage Current?

    Q: The product Gate-Emitter Leakage Current is 250 nA.

  • A: What is the Product Type of the product?

    Q: The Product Type of the product is IGBT Transistors.

  • A: What is the Factory Pack Quantity of the product?

    Q: The Factory Pack Quantity of the product is 600.

  • A: What is the Subcategory of the product?

    Q: The Subcategory of the product is IGBTs.

1680 In Stock
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Cantidad
Precio unitario
Ext. Precio
600
2,13 US$
1 278,00 US$
1200
1,80 US$
2 160,00 US$
3000
1,71 US$
5 130,00 US$
5400
1,64 US$
8 856,00 US$
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