PRF13750HR9

Mfr. #: PRF13750HR9
Fabricante: NXP Semiconductors
Descripción: RF MOSFET Transistors Pre- Production RF transistor 915MHz
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: PRF13750HR9 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
PRF13750HR9 Overview

This product is manufactured by NXP. 2.8 A continuous drain current Vds rating of - 500 mV, 105 V 19.5 dB is 11.5 dB. Output power: 750 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of SMD/SMT. NI-1230H-4S-4 package/case type is utilized by this product. This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics This product is equipped with 2 Channel for efficient performance. RF MOSFET Transistors product type MOSFETs as subcategory Gate-Source Voltage: - 6 V, 10 V Gate-Source Threshold Voltage Range: 1.3 V

PRF13750HR9 Image

PRF13750HR9

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

PRF13750HR9 Specifications
  • Manufacturer: NXP
  • Product Category: RF MOSFET Transistors
  • RoHS: Y
  • Transistor Polarity: N-Channel
  • Technology: Si
  • Id - Continuous Drain Current: 2.8 A
  • Vds - Drain-Source Breakdown Voltage: - 500 mV, 105 V
  • Gain: 19.5 dB
  • Output Power: 750 W
  • Minimum Operating Temperature: - 40 C
  • Maximum Operating Temperature: + 150 C
  • Mounting Style: SMD/SMT
  • Package / Case: NI-1230H-4S-4
  • Operating Frequency: 0.7 GHz to 1.3 GHz
  • Series: MRF13750H
  • Type: RF Power MOSFET
  • Brand: NXP Semiconductors
  • Number of Channels: 2 Channel
  • Product Type: RF MOSFET Transistors
  • Subcategory: MOSFETs
  • Vgs - Gate-Source Voltage: - 6 V, 10 V
  • Vgs th - Gate-Source Threshold Voltage: 1.3 V

PRF13750HR9

PRF13750HR9 Specifications

PRF13750HR9 FAQ
  • A: At what frequency does the Manufacturer?

    Q: The product Manufacturer is NXP.

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 2.8 A.

  • A: What is the Vds - Drain-Source Breakdown Voltage of the product?

    Q: The Vds - Drain-Source Breakdown Voltage of the product is - 500 mV, 105 V.

  • A: At what frequency does the Gain?

    Q: The product Gain is 19.5 dB.

  • A: Is the cutoff frequency of the product Output Power?

    Q: Yes, the product's Output Power is indeed 750 W

  • A: Is the cutoff frequency of the product Minimum Operating Temperature?

    Q: Yes, the product's Minimum Operating Temperature is indeed - 40 C

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 150 C.

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is SMD/SMT.

  • A: At what frequency does the Package / Case?

    Q: The product Package / Case is NI-1230H-4S-4.

  • A: Is the cutoff frequency of the product Type?

    Q: Yes, the product's Type is indeed RF Power MOSFET

  • A: At what frequency does the Brand?

    Q: The product Brand is NXP Semiconductors.

  • A: At what frequency does the Number of Channels?

    Q: The product Number of Channels is 2 Channel.

  • A: What is the Product Type of the product?

    Q: The Product Type of the product is RF MOSFET Transistors.

  • A: What is the Subcategory of the product?

    Q: The Subcategory of the product is MOSFETs.

  • A: At what frequency does the Vgs - Gate-Source Voltage?

    Q: The product Vgs - Gate-Source Voltage is - 6 V, 10 V.

  • A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?

    Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 1.3 V

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