IRF630

Mfr. #: IRF630
Fabricante: STMicroelectronics
Descripción: MOSFET N-Ch 200 Volt 10 Amp
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: IRF630 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
IRF630 Overview

This product is manufactured by STMicroelectronics. The product can operate at a maximum temperature of Through Hole. TO-220-3 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 200 V 9 A continuous drain current Rds On value of 400 mOhms Gate-Source Threshold Voltage Range: 2 V Gate-Source Voltage: 10 V The minimum operating temperature of this product is - 65 C. The product can operate at a maximum temperature of + 150 C. 75 W This product has a Single configuration. The Channel Mode is set to Enhancement. The height of the product is 9.15 mm. 10.4 mm long The Transistor Type is 1 N-Channel. This device belongs to the MOSFET type. STMicroelectronics is a trusted brand for quality electronics Minimum forward transconductance of 3 S MOSFET product type Rise Time is 15 ns. 1000 of 100 MOSFETs as subcategory The typical turn-on delay time is 10 ns. 1. 0.011640 oz of Unit Weight

IRF630 Image

IRF630

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IRF630 Specifications
  • Manufacturer: STMicroelectronics
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: Through Hole
  • Package / Case: TO-220-3
  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 200 V
  • Id - Continuous Drain Current: 9 A
  • Rds On - Drain-Source Resistance: 400 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 2 V
  • Vgs - Gate-Source Voltage: 10 V
  • Qg - Gate Charge: 31 nC
  • Minimum Operating Temperature: - 65 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 75 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Height: 9.15 mm
  • Length: 10.4 mm
  • Series: IRF630
  • Transistor Type: 1 N-Channel
  • Type: MOSFET
  • Width: 4.6 mm
  • Brand: STMicroelectronics
  • Forward Transconductance - Min: 3 S
  • Product Type: MOSFET
  • Rise Time: 15 ns
  • Factory Pack Quantity: 1000
  • Subcategory: MOSFETs
  • Typical Turn-On Delay Time: 10 ns
  • Unit Weight: 0.011640 oz

IRF630

IRF630 Specifications

IRF630 FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed STMicroelectronics

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is Through Hole.

  • A: Is the cutoff frequency of the product Package / Case?

    Q: Yes, the product's Package / Case is indeed TO-220-3

  • A: Is the cutoff frequency of the product Number of Channels?

    Q: Yes, the product's Number of Channels is indeed 1 Channel

  • A: What is the Vds - Drain-Source Breakdown Voltage of the product?

    Q: The Vds - Drain-Source Breakdown Voltage of the product is 200 V.

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 9 A.

  • A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?

    Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 400 mOhms

  • A: What is the Vgs th - Gate-Source Threshold Voltage of the product?

    Q: The Vgs th - Gate-Source Threshold Voltage of the product is 2 V.

  • A: At what frequency does the Vgs - Gate-Source Voltage?

    Q: The product Vgs - Gate-Source Voltage is 10 V.

  • A: At what frequency does the Minimum Operating Temperature?

    Q: The product Minimum Operating Temperature is - 65 C.

  • A: What is the Maximum Operating Temperature of the product?

    Q: The Maximum Operating Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Pd - Power Dissipation?

    Q: Yes, the product's Pd - Power Dissipation is indeed 75 W

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: Is the cutoff frequency of the product Channel Mode?

    Q: Yes, the product's Channel Mode is indeed Enhancement

  • A: What is the Height of the product?

    Q: The Height of the product is 9.15 mm.

  • A: Is the cutoff frequency of the product Length?

    Q: Yes, the product's Length is indeed 10.4 mm

  • A: Is the cutoff frequency of the product Transistor Type?

    Q: Yes, the product's Transistor Type is indeed 1 N-Channel

  • A: What is the Type of the product?

    Q: The Type of the product is MOSFET.

  • A: At what frequency does the Brand?

    Q: The product Brand is STMicroelectronics.

  • A: Is the cutoff frequency of the product Forward Transconductance - Min?

    Q: Yes, the product's Forward Transconductance - Min is indeed 3 S

  • A: Is the cutoff frequency of the product Product Type?

    Q: Yes, the product's Product Type is indeed MOSFET

  • A: Is the cutoff frequency of the product Rise Time?

    Q: Yes, the product's Rise Time is indeed 15 ns

  • A: At what frequency does the Factory Pack Quantity?

    Q: The product Factory Pack Quantity is 1000.

  • A: What is the Subcategory of the product?

    Q: The Subcategory of the product is MOSFETs.

  • A: At what frequency does the Typical Turn-On Delay Time?

    Q: The product Typical Turn-On Delay Time is 10 ns.

  • A: Is the cutoff frequency of the product Unit Weight?

    Q: Yes, the product's Unit Weight is indeed 0.011640 oz

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Cantidad
Precio unitario
Ext. Precio
1
1,03 US$
1,03 US$
10
0,88 US$
8,81 US$
100
0,68 US$
67,70 US$
500
0,60 US$
299,00 US$
1000
0,47 US$
472,00 US$
2000
0,42 US$
838,00 US$
10000
0,40 US$
4 030,00 US$
25000
0,39 US$
9 775,00 US$
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