CSD88539ND

Mfr. #: CSD88539ND
Fabricante: Texas Instruments
Descripción: MOSFET 60-V Dual N-Channel Power MOSFET
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: CSD88539ND Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD88539ND Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. SOIC-8 package/case type is utilized by this product. This product is equipped with 2 Channel for efficient performance. Vds rating of 60 V 15 A continuous drain current Rds On value of 28 mOhms Gate-Source Threshold Voltage Range: 2.6 V Gate-Source Voltage: 10 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 2.1 W This product has a Dual configuration. The Channel Mode is set to Enhancement. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 1.75 mm. 4.9 mm long The Transistor Type is 2 N-Channel Power MOSFET. Texas Instruments is a trusted brand for quality electronics 4 ns fall time MOSFET product type Rise Time is 9 ns. 2500 of 100 MOSFETs as subcategory Turn-off delay time is 14 ns. The typical turn-on delay time is 5 ns. 1. 0.019048 oz of Unit Weight

CSD88539ND Image

CSD88539ND

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD88539ND Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: SOIC-8
  • Number of Channels: 2 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 60 V
  • Id - Continuous Drain Current: 15 A
  • Rds On - Drain-Source Resistance: 28 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 2.6 V
  • Vgs - Gate-Source Voltage: 10 V
  • Qg - Gate Charge: 7.2 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 2.1 W
  • Configuration: Dual
  • Channel Mode: Enhancement
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 1.75 mm
  • Length: 4.9 mm
  • Series: CSD88539ND
  • Transistor Type: 2 N-Channel Power MOSFET
  • Width: 3.9 mm
  • Brand: Texas Instruments
  • Fall Time: 4 ns
  • Product Type: MOSFET
  • Rise Time: 9 ns
  • Factory Pack Quantity: 2500
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 14 ns
  • Typical Turn-On Delay Time: 5 ns
  • Unit Weight: 0.019048 oz

CSD88539ND

CSD88539ND Specifications

CSD88539ND FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed Texas Instruments

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is SMD/SMT.

  • A: What is the Package / Case of the product?

    Q: The Package / Case of the product is SOIC-8.

  • A: At what frequency does the Number of Channels?

    Q: The product Number of Channels is 2 Channel.

  • A: What is the Vds - Drain-Source Breakdown Voltage of the product?

    Q: The Vds - Drain-Source Breakdown Voltage of the product is 60 V.

  • A: What is the Id - Continuous Drain Current of the product?

    Q: The Id - Continuous Drain Current of the product is 15 A.

  • A: At what frequency does the Rds On - Drain-Source Resistance?

    Q: The product Rds On - Drain-Source Resistance is 28 mOhms.

  • A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?

    Q: The product Vgs th - Gate-Source Threshold Voltage is 2.6 V.

  • A: At what frequency does the Vgs - Gate-Source Voltage?

    Q: The product Vgs - Gate-Source Voltage is 10 V.

  • A: Is the cutoff frequency of the product Minimum Operating Temperature?

    Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 150 C.

  • A: At what frequency does the Pd - Power Dissipation?

    Q: The product Pd - Power Dissipation is 2.1 W.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Dual.

  • A: Is the cutoff frequency of the product Channel Mode?

    Q: Yes, the product's Channel Mode is indeed Enhancement

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: Is the cutoff frequency of the product Height?

    Q: Yes, the product's Height is indeed 1.75 mm

  • A: Is the cutoff frequency of the product Length?

    Q: Yes, the product's Length is indeed 4.9 mm

  • A: What is the Transistor Type of the product?

    Q: The Transistor Type of the product is 2 N-Channel Power MOSFET.

  • A: Is the cutoff frequency of the product Brand?

    Q: Yes, the product's Brand is indeed Texas Instruments

  • A: At what frequency does the Fall Time?

    Q: The product Fall Time is 4 ns.

  • A: What is the Product Type of the product?

    Q: The Product Type of the product is MOSFET.

  • A: Is the cutoff frequency of the product Rise Time?

    Q: Yes, the product's Rise Time is indeed 9 ns

  • A: What is the Factory Pack Quantity of the product?

    Q: The Factory Pack Quantity of the product is 2500.

  • A: What is the Subcategory of the product?

    Q: The Subcategory of the product is MOSFETs.

  • A: What is the Typical Turn-Off Delay Time of the product?

    Q: The Typical Turn-Off Delay Time of the product is 14 ns.

  • A: What is the Typical Turn-On Delay Time of the product?

    Q: The Typical Turn-On Delay Time of the product is 5 ns.

  • A: At what frequency does the Unit Weight?

    Q: The product Unit Weight is 0.019048 oz.

20 In Stock
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Cantidad
Precio unitario
Ext. Precio
1
0,81 US$
0,81 US$
10
0,67 US$
6,70 US$
100
0,43 US$
43,20 US$
1000
0,34 US$
345,00 US$
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