CSD86311W1723

Mfr. #: CSD86311W1723
Fabricante: Texas Instruments
Descripción: MOSFET Dual N-Channel Nex FET Pwr MOSFET
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: CSD86311W1723 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD86311W1723 Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. DSBGA-12 package/case type is utilized by this product. This product is equipped with 2 Channel for efficient performance. Vds rating of 25 V 5 A continuous drain current Rds On value of 42 mOhms Gate-Source Threshold Voltage Range: 1 V Gate-Source Voltage: 10 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 1.5 W This product has a Dual configuration. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 0.62 mm. 2.32 mm long The Transistor Type is 2 N-Channel. Texas Instruments is a trusted brand for quality electronics Minimum forward transconductance of 6.4 S 2.9 ns fall time MOSFET product type Rise Time is 4.3 ns. 3000 of 100 MOSFETs as subcategory Turn-off delay time is 13.2 ns. The typical turn-on delay time is 5.4 ns. 1. 0.000145 oz of Unit Weight

CSD86311W1723 Image

CSD86311W1723

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD86311W1723 Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: DSBGA-12
  • Number of Channels: 2 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 25 V
  • Id - Continuous Drain Current: 5 A
  • Rds On - Drain-Source Resistance: 42 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 1 V
  • Vgs - Gate-Source Voltage: 10 V
  • Qg - Gate Charge: 3.1 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 1.5 W
  • Configuration: Dual
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 0.62 mm
  • Length: 2.32 mm
  • Series: CSD86311W1723
  • Transistor Type: 2 N-Channel
  • Width: 1.74 mm
  • Brand: Texas Instruments
  • Forward Transconductance - Min: 6.4 S
  • Fall Time: 2.9 ns
  • Product Type: MOSFET
  • Rise Time: 4.3 ns
  • Factory Pack Quantity: 3000
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 13.2 ns
  • Typical Turn-On Delay Time: 5.4 ns
  • Unit Weight: 0.000145 oz

CSD86311W1723

CSD86311W1723 Specifications

CSD86311W1723 FAQ
  • A: At what frequency does the Manufacturer?

    Q: The product Manufacturer is Texas Instruments.

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is SMD/SMT.

  • A: At what frequency does the Package / Case?

    Q: The product Package / Case is DSBGA-12.

  • A: What is the Number of Channels of the product?

    Q: The Number of Channels of the product is 2 Channel.

  • A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?

    Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 25 V

  • A: At what frequency does the Id - Continuous Drain Current?

    Q: The product Id - Continuous Drain Current is 5 A.

  • A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?

    Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 42 mOhms

  • A: What is the Vgs th - Gate-Source Threshold Voltage of the product?

    Q: The Vgs th - Gate-Source Threshold Voltage of the product is 1 V.

  • A: What is the Vgs - Gate-Source Voltage of the product?

    Q: The Vgs - Gate-Source Voltage of the product is 10 V.

  • A: Is the cutoff frequency of the product Minimum Operating Temperature?

    Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

  • A: Is the cutoff frequency of the product Maximum Operating Temperature?

    Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C

  • A: What is the Pd - Power Dissipation of the product?

    Q: The Pd - Power Dissipation of the product is 1.5 W.

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: At what frequency does the Height?

    Q: The product Height is 0.62 mm.

  • A: What is the Length of the product?

    Q: The Length of the product is 2.32 mm.

  • A: Is the cutoff frequency of the product Transistor Type?

    Q: Yes, the product's Transistor Type is indeed 2 N-Channel

  • A: What is the Brand of the product?

    Q: The Brand of the product is Texas Instruments.

  • A: At what frequency does the Forward Transconductance - Min?

    Q: The product Forward Transconductance - Min is 6.4 S.

  • A: Is the cutoff frequency of the product Fall Time?

    Q: Yes, the product's Fall Time is indeed 2.9 ns

  • A: What is the Product Type of the product?

    Q: The Product Type of the product is MOSFET.

  • A: What is the Rise Time of the product?

    Q: The Rise Time of the product is 4.3 ns.

  • A: What is the Factory Pack Quantity of the product?

    Q: The Factory Pack Quantity of the product is 3000.

  • A: What is the Subcategory of the product?

    Q: The Subcategory of the product is MOSFETs.

  • A: At what frequency does the Typical Turn-Off Delay Time?

    Q: The product Typical Turn-Off Delay Time is 13.2 ns.

  • A: At what frequency does the Typical Turn-On Delay Time?

    Q: The product Typical Turn-On Delay Time is 5.4 ns.

  • A: At what frequency does the Unit Weight?

    Q: The product Unit Weight is 0.000145 oz.

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Cantidad
Precio unitario
Ext. Precio
1
1,08 US$
1,08 US$
10
0,92 US$
9,20 US$
100
0,71 US$
70,60 US$
500
0,62 US$
312,00 US$
1000
0,49 US$
492,00 US$
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