CSD19537Q3

Mfr. #: CSD19537Q3
Fabricante: Texas Instruments
Descripción: MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 14.5mOhm 8-VSON-CLIP -55 to 150
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: CSD19537Q3 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD19537Q3 Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. VSON-Clip-8 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 100 V 50 A continuous drain current Rds On value of 14.5 mOhms Gate-Source Threshold Voltage Range: 2.6 V Gate-Source Voltage: 10 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 83 W This product has a Single configuration. The Channel Mode is set to Enhancement. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 1 mm. 3.3 mm long The Transistor Type is 1 N-Channel Power MOSFET. Texas Instruments is a trusted brand for quality electronics 3 ns fall time MOSFET product type Rise Time is 3 ns. 2500 of 100 MOSFETs as subcategory Turn-off delay time is 10 ns. The typical turn-on delay time is 5 ns. 1. 0.000847 oz of Unit Weight

CSD19537Q3 Image

CSD19537Q3

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD19537Q3 Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: VSON-Clip-8
  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 100 V
  • Id - Continuous Drain Current: 50 A
  • Rds On - Drain-Source Resistance: 14.5 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 2.6 V
  • Vgs - Gate-Source Voltage: 10 V
  • Qg - Gate Charge: 16 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 83 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 1 mm
  • Length: 3.3 mm
  • Series: CSD19537Q3
  • Transistor Type: 1 N-Channel Power MOSFET
  • Width: 3.3 mm
  • Brand: Texas Instruments
  • Fall Time: 3 ns
  • Product Type: MOSFET
  • Rise Time: 3 ns
  • Factory Pack Quantity: 2500
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 10 ns
  • Typical Turn-On Delay Time: 5 ns
  • Unit Weight: 0.000847 oz

CSD19537Q3

CSD19537Q3 Specifications

CSD19537Q3 FAQ
  • A: Is the cutoff frequency of the product Manufacturer?

    Q: Yes, the product's Manufacturer is indeed Texas Instruments

  • A: Is the cutoff frequency of the product Mounting Style?

    Q: Yes, the product's Mounting Style is indeed SMD/SMT

  • A: At what frequency does the Package / Case?

    Q: The product Package / Case is VSON-Clip-8.

  • A: At what frequency does the Number of Channels?

    Q: The product Number of Channels is 1 Channel.

  • A: What is the Vds - Drain-Source Breakdown Voltage of the product?

    Q: The Vds - Drain-Source Breakdown Voltage of the product is 100 V.

  • A: Is the cutoff frequency of the product Id - Continuous Drain Current?

    Q: Yes, the product's Id - Continuous Drain Current is indeed 50 A

  • A: What is the Rds On - Drain-Source Resistance of the product?

    Q: The Rds On - Drain-Source Resistance of the product is 14.5 mOhms.

  • A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?

    Q: The product Vgs th - Gate-Source Threshold Voltage is 2.6 V.

  • A: What is the Vgs - Gate-Source Voltage of the product?

    Q: The Vgs - Gate-Source Voltage of the product is 10 V.

  • A: What is the Minimum Operating Temperature of the product?

    Q: The Minimum Operating Temperature of the product is - 55 C.

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Pd - Power Dissipation?

    Q: Yes, the product's Pd - Power Dissipation is indeed 83 W

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Single.

  • A: Is the cutoff frequency of the product Channel Mode?

    Q: Yes, the product's Channel Mode is indeed Enhancement

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Height of the product?

    Q: The Height of the product is 1 mm.

  • A: What is the Length of the product?

    Q: The Length of the product is 3.3 mm.

  • A: At what frequency does the Transistor Type?

    Q: The product Transistor Type is 1 N-Channel Power MOSFET.

  • A: What is the Brand of the product?

    Q: The Brand of the product is Texas Instruments.

  • A: At what frequency does the Fall Time?

    Q: The product Fall Time is 3 ns.

  • A: Is the cutoff frequency of the product Product Type?

    Q: Yes, the product's Product Type is indeed MOSFET

  • A: At what frequency does the Rise Time?

    Q: The product Rise Time is 3 ns.

  • A: Is the cutoff frequency of the product Factory Pack Quantity?

    Q: Yes, the product's Factory Pack Quantity is indeed 2500

  • A: What is the Subcategory of the product?

    Q: The Subcategory of the product is MOSFETs.

  • A: What is the Typical Turn-Off Delay Time of the product?

    Q: The Typical Turn-Off Delay Time of the product is 10 ns.

  • A: At what frequency does the Typical Turn-On Delay Time?

    Q: The product Typical Turn-On Delay Time is 5 ns.

  • A: At what frequency does the Unit Weight?

    Q: The product Unit Weight is 0.000847 oz.

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Cantidad
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Ext. Precio
1
1,25 US$
1,25 US$
10
1,07 US$
10,70 US$
100
0,82 US$
82,10 US$
500
0,72 US$
362,50 US$
1000
0,57 US$
573,00 US$
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