CSD16327Q3T

Mfr. #: CSD16327Q3T
Fabricante: Texas Instruments
Descripción: MOSFET 25V, N ch NexFET MOSFETG , single SON3x3, 4.8mOhm 8-VSON-CLIP -55 to 150
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: CSD16327Q3T Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD16327Q3T Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. VSON-Clip-8 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 25 V 60 A continuous drain current Rds On value of 4.8 mOhms Gate-Source Threshold Voltage Range: 900 mV Gate-Source Voltage: 10 V, - 8 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 74 W This product has a Single configuration. The Channel Mode is set to Enhancement. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 1 mm. 3.3 mm long The Transistor Type is 1 N-Channel. Texas Instruments is a trusted brand for quality electronics Minimum forward transconductance of 96 S 6.3 ns fall time MOSFET product type Rise Time is 15 ns. 250 of 100 MOSFETs as subcategory Turn-off delay time is 13 ns. The typical turn-on delay time is 5.3 ns. 1. 0.001570 oz of Unit Weight

CSD16327Q3T Image

CSD16327Q3T

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD16327Q3T Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: E
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: VSON-Clip-8
  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 25 V
  • Id - Continuous Drain Current: 60 A
  • Rds On - Drain-Source Resistance: 4.8 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 900 mV
  • Vgs - Gate-Source Voltage: 10 V, - 8 V
  • Qg - Gate Charge: 8.4 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 74 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 1 mm
  • Length: 3.3 mm
  • Series: CSD16327Q3
  • Transistor Type: 1 N-Channel
  • Width: 3.3 mm
  • Brand: Texas Instruments
  • Forward Transconductance - Min: 96 S
  • Fall Time: 6.3 ns
  • Product Type: MOSFET
  • Rise Time: 15 ns
  • Factory Pack Quantity: 250
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 13 ns
  • Typical Turn-On Delay Time: 5.3 ns
  • Unit Weight: 0.001570 oz

CSD16327Q3T

CSD16327Q3T Specifications

CSD16327Q3T FAQ
  • A: What is the Manufacturer of the product?

    Q: The Manufacturer of the product is Texas Instruments.

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is SMD/SMT.

  • A: At what frequency does the Package / Case?

    Q: The product Package / Case is VSON-Clip-8.

  • A: Is the cutoff frequency of the product Number of Channels?

    Q: Yes, the product's Number of Channels is indeed 1 Channel

  • A: What is the Vds - Drain-Source Breakdown Voltage of the product?

    Q: The Vds - Drain-Source Breakdown Voltage of the product is 25 V.

  • A: At what frequency does the Id - Continuous Drain Current?

    Q: The product Id - Continuous Drain Current is 60 A.

  • A: What is the Rds On - Drain-Source Resistance of the product?

    Q: The Rds On - Drain-Source Resistance of the product is 4.8 mOhms.

  • A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?

    Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 900 mV

  • A: Is the cutoff frequency of the product Vgs - Gate-Source Voltage?

    Q: Yes, the product's Vgs - Gate-Source Voltage is indeed 10 V, - 8 V

  • A: What is the Minimum Operating Temperature of the product?

    Q: The Minimum Operating Temperature of the product is - 55 C.

  • A: At what frequency does the Maximum Operating Temperature?

    Q: The product Maximum Operating Temperature is + 150 C.

  • A: What is the Pd - Power Dissipation of the product?

    Q: The Pd - Power Dissipation of the product is 74 W.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: What is the Channel Mode of the product?

    Q: The Channel Mode of the product is Enhancement.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: At what frequency does the Height?

    Q: The product Height is 1 mm.

  • A: What is the Length of the product?

    Q: The Length of the product is 3.3 mm.

  • A: What is the Transistor Type of the product?

    Q: The Transistor Type of the product is 1 N-Channel.

  • A: At what frequency does the Brand?

    Q: The product Brand is Texas Instruments.

  • A: Is the cutoff frequency of the product Forward Transconductance - Min?

    Q: Yes, the product's Forward Transconductance - Min is indeed 96 S

  • A: What is the Fall Time of the product?

    Q: The Fall Time of the product is 6.3 ns.

  • A: What is the Product Type of the product?

    Q: The Product Type of the product is MOSFET.

  • A: At what frequency does the Rise Time?

    Q: The product Rise Time is 15 ns.

  • A: At what frequency does the Factory Pack Quantity?

    Q: The product Factory Pack Quantity is 250.

  • A: What is the Subcategory of the product?

    Q: The Subcategory of the product is MOSFETs.

  • A: What is the Typical Turn-Off Delay Time of the product?

    Q: The Typical Turn-Off Delay Time of the product is 13 ns.

  • A: At what frequency does the Typical Turn-On Delay Time?

    Q: The product Typical Turn-On Delay Time is 5.3 ns.

  • A: What is the Unit Weight of the product?

    Q: The Unit Weight of the product is 0.001570 oz.

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