2STR2230

Mfr. #: 2STR2230
Fabricante: STMicroelectronics
Descripción: Bipolar Transistors - BJT LOW VOLT TRAN
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: 2STR2230 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
2STR2230 Overview

Product belongs to the 500V Transistors series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.007090 oz SMD/SMT Mounting-Style TO-236-3, SC-59, SOT-23-3 Surface Mount mounting type Supplier device package: SOT-23-3 Configuration Single Transistor type: PNP Maximum current collector Ic is 1.5A . Maximum collector-emitter breakdown voltage of 30V DC current gain minimum (hFE) of Ic/Vce at 170 @ 500mA, 2V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 800mV @ 200mA, 2A Power-off control: 0.5 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to - 30 V The transistor polarity is PNP. Saturation voltage between collector and emitter is - 0.42 V The 30 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 1.5 A Gain-Bandwidth-Product: 100 MHz Minimum hfe for DC collector-base gain is 70. 560 of 605.

2STR2230 Image

2STR2230

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2STR2230 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single, Pre-Biased
  • Series 500V Transistors
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.007090 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-236-3, SC-59, SOT-23-3
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-23-3
  • Configuration Single
  • Power-Max 500mW
  • Transistor-Type PNP
  • Current-Collector-Ic-Max 1.5A
  • Voltage-Collector-Emitter-Breakdown-Max 30V
  • DC-Current-Gain-hFE-Min-Ic-Vce 170 @ 500mA, 2V
  • Vce-Saturation-Max-Ib-Ic 800mV @ 200mA, 2A
  • Current-Collector-Cutoff-Max 100nA (ICBO)
  • Frequency-Transition 100MHz
  • Pd-Power-Dissipation 0.5 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max - 30 V
  • Transistor-Polarity PNP
  • Collector-Emitter-Saturation-Voltage - 0.42 V
  • Collector-Base-Voltage-VCBO 30 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 1.5 A
  • Gain-Bandwidth-Product-fT 100 MHz
  • DC-Collector-Base-Gain-hfe-Min 70
  • DC-Current-Gain-hFE-Max 560

2STR2230

2STR2230 Specifications

2STR2230 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is 500V Transistors.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Digi-ReelR Alternate Packaging.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.007090 oz.

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-236-3, SC-59, SOT-23-3.

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Surface Mount.

  • A: At what frequency does the Supplier-Device-Package?

    Q: The product Supplier-Device-Package is SOT-23-3.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is PNP.

  • A: Is the cutoff frequency of the product Current-Collector-Ic-Max?

    Q: Yes, the product's Current-Collector-Ic-Max is indeed 1.5A

  • A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?

    Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 30V

  • A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 170 @ 500mA, 2V.

  • A: What is the Vce-Saturation-Max-Ib-Ic of the product?

    Q: The Vce-Saturation-Max-Ib-Ic of the product is 800mV @ 200mA, 2A.

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 0.5 W

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

  • A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?

    Q: The product Collector-Emitter-Voltage-VCEO-Max is - 30 V.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is PNP.

  • A: Is the cutoff frequency of the product Collector-Emitter-Saturation-Voltage?

    Q: Yes, the product's Collector-Emitter-Saturation-Voltage is indeed - 0.42 V

  • A: At what frequency does the Collector-Base-Voltage-VCBO?

    Q: The product Collector-Base-Voltage-VCBO is 30 V.

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 5 V.

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 1.5 A.

  • A: Is the cutoff frequency of the product Gain-Bandwidth-Product-fT?

    Q: Yes, the product's Gain-Bandwidth-Product-fT is indeed 100 MHz

  • A: What is the DC-Collector-Base-Gain-hfe-Min of the product?

    Q: The DC-Collector-Base-Gain-hfe-Min of the product is 70.

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Max?

    Q: Yes, the product's DC-Current-Gain-hFE-Max is indeed 560

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1
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0,02 US$
10
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0,23 US$
100
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2,17 US$
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