Mfr. #: | 2SD1047 |
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Fabricante: | STMicroelectronics |
Descripción: | Bipolar Transistors - BJT IGBT & Power Bipola |
Ciclo vital: | Nuevo de este fabricante. |
Ficha de datos: | 2SD1047 Ficha de datos |
Product belongs to the 500V Transistors series. Tube is the packaging method for this product Weight of 0.238311 oz Through Hole Mounting-Style TO-3P-3, SC-65-3 Through Hole mounting type Supplier device package: TO-3P Transistor type: NPN Maximum current collector Ic is 12A . Maximum collector-emitter breakdown voltage of 140V DC current gain minimum (hFE) of Ic/Vce at 60 @ 1A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 700mV @ 700mA, 7A Power-off control: 100 W Rated VCEO up to 140 V The transistor polarity is NPN. 6 V rating of 5 V Gain-Bandwidth-Product: 20 MHz This product is capable of handling a 12 A continuous collector current. Minimum hfe for DC collector-base gain is 50.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
2SD1047 Specifications
A: What is the Series of the product?
Q: The Series of the product is 500V Transistors.
A: Is the cutoff frequency of the product Packaging?
Q: Yes, the product's Packaging is indeed Tube
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.238311 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-3P-3, SC-65-3
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Through Hole
A: What is the Supplier-Device-Package of the product?
Q: The Supplier-Device-Package of the product is TO-3P.
A: At what frequency does the Transistor-Type?
Q: The product Transistor-Type is NPN.
A: Is the cutoff frequency of the product Current-Collector-Ic-Max?
Q: Yes, the product's Current-Collector-Ic-Max is indeed 12A
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 140V
A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?
Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 60 @ 1A, 5V.
A: What is the Vce-Saturation-Max-Ib-Ic of the product?
Q: The Vce-Saturation-Max-Ib-Ic of the product is 700mV @ 700mA, 7A.
A: At what frequency does the Pd-Power-Dissipation?
Q: The product Pd-Power-Dissipation is 100 W.
A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?
Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed 140 V
A: At what frequency does the Transistor-Polarity?
Q: The product Transistor-Polarity is NPN.
A: What is the Emitter-Base-Voltage-VEBO of the product?
Q: The Emitter-Base-Voltage-VEBO of the product is 6 V.
A: Is the cutoff frequency of the product Gain-Bandwidth-Product-fT?
Q: Yes, the product's Gain-Bandwidth-Product-fT is indeed 20 MHz
A: What is the Continuous-Collector-Current of the product?
Q: The Continuous-Collector-Current of the product is 12 A.
A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?
Q: The product DC-Collector-Base-Gain-hfe-Min is 50.