2N6661

Mfr. #: 2N6661
Fabricante: Microchip Technology
Descripción: MOSFET N-CH 90V 0.86A TO-205
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: 2N6661 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
2N6661 Overview

Product belongs to the - series. Bulk is the packaging method for this product Through Hole Mounting-Style TO-205AD, TO-39-3 Metal Can Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-39 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 90V This product has an 50pF @ 24V value of 300pF @ 25V. This product's Standard. 350mA (Tj) continuous drain-ID current at 25°C; This product has an 4 Ohm @ 1A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 6.25 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 20 V. The ID of continuous drain current is 1.5 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 90 V. The 4 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. This product operates in Enhancement channel mode for optimal performance.

2N6661 Image

2N6661

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2N6661 Specifications
  • Manufacturer Microchip Technology
  • Product Category FETs - Single
  • Series -
  • Packaging Bulk
  • Mounting-Style Through Hole
  • Package-Case TO-205AD, TO-39-3 Metal Can
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-39
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 6.25W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 90V
  • Input-Capacitance-Ciss-Vds 50pF @ 24V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 350mA (Tj)
  • Rds-On-Max-Id-Vgs 4 Ohm @ 1A, 10V
  • Vgs-th-Max-Id 2V @ 1mA
  • Gate-Charge-Qg-Vgs -
  • Pd-Power-Dissipation 6.25 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 1.5 A
  • Vds-Drain-Source-Breakdown-Voltage 90 V
  • Rds-On-Drain-Source-Resistance 4 Ohms
  • Transistor-Polarity N-Channel
  • Channel-Mode Enhancement

2N6661

2N6661 Specifications

2N6661 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is -.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Bulk.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is Through Hole.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-205AD, TO-39-3 Metal Can

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Through Hole.

  • A: Is the cutoff frequency of the product Number-of-Channels?

    Q: Yes, the product's Number-of-Channels is indeed 1 Channel

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-39

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: Is the cutoff frequency of the product FET-Type?

    Q: Yes, the product's FET-Type is indeed MOSFET N-Channel, Metal Oxide

  • A: At what frequency does the Transistor-Type?

    Q: The product Transistor-Type is 1 N-Channel.

  • A: At what frequency does the Drain-to-Source-Voltage-Vdss?

    Q: The product Drain-to-Source-Voltage-Vdss is 90V.

  • A: What is the Input-Capacitance-Ciss-Vds of the product?

    Q: The Input-Capacitance-Ciss-Vds of the product is 50pF @ 24V.

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: What is the Current-Continuous-Drain-Id-25°C of the product?

    Q: The Current-Continuous-Drain-Id-25°C of the product is 350mA (Tj).

  • A: What is the Rds-On-Max-Id-Vgs of the product?

    Q: The Rds-On-Max-Id-Vgs of the product is 4 Ohm @ 1A, 10V.

  • A: At what frequency does the Pd-Power-Dissipation?

    Q: The product Pd-Power-Dissipation is 6.25 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 20 V.

  • A: At what frequency does the Id-Continuous-Drain-Current?

    Q: The product Id-Continuous-Drain-Current is 1.5 A.

  • A: What is the Vds-Drain-Source-Breakdown-Voltage of the product?

    Q: The Vds-Drain-Source-Breakdown-Voltage of the product is 90 V.

  • A: Is the cutoff frequency of the product Rds-On-Drain-Source-Resistance?

    Q: Yes, the product's Rds-On-Drain-Source-Resistance is indeed 4 Ohms

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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