2N6660

Mfr. #: 2N6660
Fabricante: Microchip Technology
Descripción: MOSFET N-CH 60V 0.99A TO-205
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: 2N6660 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
2N6660 Overview

Product belongs to the - series. Bulk is the packaging method for this product Through Hole Mounting-Style TO-205AD, TO-39-3 Metal Can Si is the technology used. Operational temperature range: -55°C ~ 150°C (TJ) Through Hole mounting type Number of channels: 1 Channel Supplier device package: TO-39 Configuration Single This product uses an MOSFET N-Channel, Metal Oxide FET-Type transistor. Transistor type: 1 N-Channel 60V This product has an 50pF @ 24V value of 300pF @ 25V. This product's Standard. 410mA (Ta) continuous drain-ID current at 25°C; This product has an 3 Ohm @ 1A, 10V of 12 Ohm @ 150mA, 0V. Power-off control: 6.25 W Maximum operating temperature of + 150 C Minimum operating temperature: - 55 C This product's 20 V. The ID of continuous drain current is 410 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 60 V. The 3 Ohms for this product is 12 Ohms. The transistor polarity is N-Channel. This product operates in Enhancement channel mode for optimal performance.

2N6660 Image

2N6660

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2N6660 Specifications
  • Manufacturer Microchip Technology
  • Product Category FETs - Single
  • Series -
  • Packaging Bulk
  • Mounting-Style Through Hole
  • Package-Case TO-205AD, TO-39-3 Metal Can
  • Technology Si
  • Operating-Temperature -55°C ~ 150°C (TJ)
  • Mounting-Type Through Hole
  • Number-of-Channels 1 Channel
  • Supplier-Device-Package TO-39
  • Configuration Single
  • FET-Type MOSFET N-Channel, Metal Oxide
  • Power-Max 6.25W
  • Transistor-Type 1 N-Channel
  • Drain-to-Source-Voltage-Vdss 60V
  • Input-Capacitance-Ciss-Vds 50pF @ 24V
  • FET-Feature Standard
  • Current-Continuous-Drain-Id-25°C 410mA (Ta)
  • Rds-On-Max-Id-Vgs 3 Ohm @ 1A, 10V
  • Vgs-th-Max-Id 2V @ 1mA
  • Gate-Charge-Qg-Vgs -
  • Pd-Power-Dissipation 6.25 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 55 C
  • Vgs-Gate-Source-Voltage 20 V
  • Id-Continuous-Drain-Current 410 mA
  • Vds-Drain-Source-Breakdown-Voltage 60 V
  • Rds-On-Drain-Source-Resistance 3 Ohms
  • Transistor-Polarity N-Channel
  • Channel-Mode Enhancement

2N6660

2N6660 Specifications

2N6660 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is -.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Bulk.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-205AD, TO-39-3 Metal Can.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: Is the cutoff frequency of the product Operating-Temperature?

    Q: Yes, the product's Operating-Temperature is indeed -55°C ~ 150°C (TJ)

  • A: Is the cutoff frequency of the product Mounting-Type?

    Q: Yes, the product's Mounting-Type is indeed Through Hole

  • A: What is the Number-of-Channels of the product?

    Q: The Number-of-Channels of the product is 1 Channel.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is TO-39.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: At what frequency does the FET-Type?

    Q: The product FET-Type is MOSFET N-Channel, Metal Oxide.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is 1 N-Channel.

  • A: Is the cutoff frequency of the product Drain-to-Source-Voltage-Vdss?

    Q: Yes, the product's Drain-to-Source-Voltage-Vdss is indeed 60V

  • A: Is the cutoff frequency of the product Input-Capacitance-Ciss-Vds?

    Q: Yes, the product's Input-Capacitance-Ciss-Vds is indeed 50pF @ 24V

  • A: At what frequency does the FET-Feature?

    Q: The product FET-Feature is Standard.

  • A: At what frequency does the Current-Continuous-Drain-Id-25°C?

    Q: The product Current-Continuous-Drain-Id-25°C is 410mA (Ta).

  • A: Is the cutoff frequency of the product Rds-On-Max-Id-Vgs?

    Q: Yes, the product's Rds-On-Max-Id-Vgs is indeed 3 Ohm @ 1A, 10V

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 6.25 W

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 55 C

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is 20 V.

  • A: Is the cutoff frequency of the product Id-Continuous-Drain-Current?

    Q: Yes, the product's Id-Continuous-Drain-Current is indeed 410 mA

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is 60 V.

  • A: At what frequency does the Rds-On-Drain-Source-Resistance?

    Q: The product Rds-On-Drain-Source-Resistance is 3 Ohms.

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

  • A: What is the Channel-Mode of the product?

    Q: The Channel-Mode of the product is Enhancement.

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