2N5657

Mfr. #: 2N5657
Fabricante: STMicroelectronics
Descripción: Bipolar Transistors - BJT NPN Fast Switching
Ciclo vital: Nuevo de este fabricante.
Ficha de datos: 2N5657 Ficha de datos
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
2N5657 Overview

Product belongs to the 2N5657 series. Tube is the packaging method for this product Through Hole Mounting-Style SOT-32-3 Configuration Single Power-off control: 20 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 350 V The transistor polarity is NPN. Saturation voltage between collector and emitter is 10 V The 375 V voltage rating is 40 V. 6 V rating of 5 V Max DC collector current: 1 A Gain-Bandwidth-Product: 10 MHz This product is capable of handling a 0.5 A continuous collector current. Minimum hfe for DC collector-base gain is 30. 250 of 605.

2N5657 Image

2N5657

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2N5657 Specifications
  • Manufacturer MOTOROLA
  • Product Category Transistors (BJT) - Single
  • Series 2N5657
  • Packaging Tube
  • Mounting-Style Through Hole
  • Package-Case SOT-32-3
  • Configuration Single
  • Pd-Power-Dissipation 20 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 350 V
  • Transistor-Polarity NPN
  • Collector-Emitter-Saturation-Voltage 10 V
  • Collector-Base-Voltage-VCBO 375 V
  • Emitter-Base-Voltage-VEBO 6 V
  • Maximum-DC-Collector-Current 1 A
  • Gain-Bandwidth-Product-fT 10 MHz
  • Continuous-Collector-Current 0.5 A
  • DC-Collector-Base-Gain-hfe-Min 30
  • DC-Current-Gain-hFE-Max 250

2N5657

2N5657 Specifications

2N5657 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is 2N5657.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Tube.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is SOT-32-3.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 20 W.

  • A: At what frequency does the Maximum-Operating-Temperature?

    Q: The product Maximum-Operating-Temperature is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 65 C.

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 350 V.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is NPN.

  • A: Is the cutoff frequency of the product Collector-Emitter-Saturation-Voltage?

    Q: Yes, the product's Collector-Emitter-Saturation-Voltage is indeed 10 V

  • A: What is the Collector-Base-Voltage-VCBO of the product?

    Q: The Collector-Base-Voltage-VCBO of the product is 375 V.

  • A: At what frequency does the Emitter-Base-Voltage-VEBO?

    Q: The product Emitter-Base-Voltage-VEBO is 6 V.

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 1 A.

  • A: At what frequency does the Gain-Bandwidth-Product-fT?

    Q: The product Gain-Bandwidth-Product-fT is 10 MHz.

  • A: Is the cutoff frequency of the product Continuous-Collector-Current?

    Q: Yes, the product's Continuous-Collector-Current is indeed 0.5 A

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 30.

  • A: At what frequency does the DC-Current-Gain-hFE-Max?

    Q: The product DC-Current-Gain-hFE-Max is 250.

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1
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