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RQ6E055BNTCR

RQ6E055BNTCR
Mfr. #:
RQ6E055BNTCR
Fabricante:
Rohm Semiconductor
Descripción:
MOSFET Nch 30V 5.5A Power MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RQ6E055BNTCR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
RQ6E055BNTCR más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-457-6
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
5.5 A
Rds On - Resistencia de la fuente de drenaje:
19 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
8.6 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1.25 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
Semiconductor ROHM
Transconductancia directa - Mín .:
3.4 S
Otoño:
7 ns
Tipo de producto:
MOSFET
Hora de levantarse:
12 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
16 ns
Tiempo típico de retardo de encendido:
7 ns
Parte # Alias:
RQ6E055BN
Tags
RQ6E055, RQ6E05, RQ6E, RQ6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH 30V 5.5A 6-Pin TSMT T/R / MOSFET N-CH 30V 5.5A TSMT
***nell
MOSFET, N-CH, 30V, 5.5A, TSMT-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 1.25W; Transistor Case Style: TSMT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***et
N-Channel Power MOSFET 30V Drain-Source Voltage ±5.5A Continuous Drain Current 1.25W Power Dissipation Low-On Resistance 6-Pin SOT-457 Emboss T/R
***emi
N-Channel PowerTrench® MOSFET 30V, 6.5A, 23mΩ
***Yang
Trans MOSFET N-CH 30V 6.5A 6-Pin MicroFET EP T/R - Tape and Reel
***r Electronics
Small Signal Field-Effect Transistor, 6.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***i-Key Marketplace
MOSFET N-CH 30V 6.5/8A 6MICROFET
***or
SMALL SIGNAL FIELD-EFFECT TRANSI
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.
***ure Electronics
N-Channel 30 V 28 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
***ical
Trans MOSFET N-CH 30V 5.8A Automotive 3-Pin SOT-23 T/R
***ment14 APAC
MOSFET,N CH,30V,5.8A,SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Source Voltage Vds:30V; On Resistance
***nell
MOSFET,N CH,30V,5.8A,SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 1.4W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 5.8A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: 20V
***(Formerly Allied Electronics)
SI5468DC-T1-GE3 N-channel MOSFET Transistor; 6 A; 30 V; 8-Pin 1206 ChipFET
***ure Electronics
Single N-Channel 30 V 28 mOhm SMT TrenchFET Power Mosfet - 1206-8 ChipFET
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; On Resistance Rds(On):0.023Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: No
***ical
Trans MOSFET N-CH 30V 7.1A Automotive 6-Pin TSOP T/R
***nell
MOSFET, AUTO, N-CH, 30V, 7.1A, TSOP-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***emi
N-Channel Power Trench® MOSFET 30V, 6.5A, 23mΩ
***nell
MOSFET, N-CH, 30V, 8A, SUPERSOT-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Po
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***el Electronic
PMIC - Voltage Regulators - DC DC Switching Regulators 3 (168 Hours) Cut Tape (CT) 18 Weeks DUAL 14 14-WFDFN Exposed Pad 1 RICHTEK RT8287ZQW DC-DC CONVERTER, BUCK, 500KHZ, WDFN-14
***(Formerly Allied Electronics)
NTHS4166NT1G N-channel MOSFET Transistor; 8.2 A; 30 V; 8-Pin ChipFET
***emi
Single N-Channel ChipFET™ Power MOSFET 30V 8.2A 24mΩ
***ark
N CHANNEL MOSFET, 30V, 6.6A, 1206A, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.2W RoHS Compliant: Yes
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Parte # Mfg. Descripción Valores Precio
RQ6E055BNTCR
DISTI # RQ6E055BNTCRCT-ND		ROHM SemiconductorMOSFET N-CH 30V 5.5A TSMT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1998In Stock
  • 1000:$0.2504
  • 500:$0.3240
  • 100:$0.4124
  • 10:$0.5520
  • 1:$0.6500
RQ6E055BNTCR
DISTI # RQ6E055BNTCRDKR-ND		ROHM SemiconductorMOSFET N-CH 30V 5.5A TSMT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1998In Stock
  • 1000:$0.2504
  • 500:$0.3240
  • 100:$0.4124
  • 10:$0.5520
  • 1:$0.6500
RQ6E055BNTCR
DISTI # RQ6E055BNTCRTR-ND		ROHM SemiconductorMOSFET N-CH 30V 5.5A TSMT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.2217
RQ6E055BNTCR
DISTI # RQ6E055BNTCR		ROHM SemiconductorN-Channel Power MOSFET 30V Drain-Source Voltage ±5.5A Continuous Drain Current 1.25W Power Dissipation Low-On Resistance 6-Pin SOT-457 Emboss T/R - Tape and Reel (Alt: RQ6E055BNTCR)
Min Qty: 3000
Container: Reel		Americas - 0
    RQ6E055BNTCR
    DISTI # RQ6E055BNTCR    		ROHM SemiconductorN-Channel Power MOSFET 30V Drain-Source Voltage ±5.5A Continuous Drain Current 1.25W Power Dissipation Low-On Resistance 6-Pin SOT-457 Emboss T/R (Alt: RQ6E055BNTCR)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel    		Europe - 0
    • 1000:€0.0879
    • 500:€0.0949
    • 100:€0.1029
    • 50:€0.1119
    • 25:€0.1379
    • 10:€0.1769
    • 1:€0.2479
    RQ6E055BNTCR
    DISTI # 755-RQ6E055BNTCR    		ROHM SemiconductorMOSFET Nch 30V 5.5A Power MOSFET2028
    • 1:$0.5900
    • 10:$0.4980
    • 100:$0.2740
    • 1000:$0.2120
    • 3000:$0.1880
    RQ6E055BNTCRROHM Semiconductor 2424
    • 501:$0.3200
    • 126:$0.4000
    • 1:$0.8000
    RQ6E055BNTCR
    DISTI # 1501471    		ROHM SemiconductorMOSFET N-CH 30V 4.5A SOT-457T, PK150
    • 2500:£0.1500
    • 600:£0.1540
    • 300:£0.1580
    • 150:£0.1630
    • 50:£0.1800
    RQ6E055BNTCR
    DISTI # 2706769    		ROHM SemiconductorMOSFET, N-CH, 30V, 5.5A, TSMT-6
    RoHS: Compliant    		0
    • 1000:$0.3780
    • 500:$0.4890
    • 100:$0.6220
    • 10:$0.8320
    • 1:$0.9800
    RQ6E055BNTCR
    DISTI # 2706769    		ROHM SemiconductorMOSFET, N-CH, 30V, 5.5A, TSMT-60
    • 500:£0.1650
    • 250:£0.1870
    • 100:£0.2090
    • 25:£0.4010
    • 5:£0.4300
    RQ6E055BNTCRROHM Semiconductor 30
    • 1:$0.6400
    • 10:$0.3700
    • 50:$0.2300
    • 100:$0.2000
    • 500:$0.1700
    • 1000:$0.1600
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    Disponibilidad
    Valores:
    228
    En orden:
    2211
    Ingrese la cantidad:
    El precio actual de RQ6E055BNTCR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,59 US$
    0,59 US$
    10
    0,50 US$
    4,98 US$
    100
    0,27 US$
    27,40 US$
    1000
    0,21 US$
    212,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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